Paper
1 July 1998 Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity
Edwin Y. Lee, Bruce Andrew Brunett, Richard W. Olsen, John M. Van Scyoc III, Haim Hermon, Ralph B. James
Author Affiliations +
Abstract
The electric properties of CdZnTe radiation detectors are largely determined by the electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 X 10-16 cm(superscript 2$ is detected and three hole traps having energies of 70 +/- 20 meV, 105 +/- 30 meV and 694 +/- 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edwin Y. Lee, Bruce Andrew Brunett, Richard W. Olsen, John M. Van Scyoc III, Haim Hermon, and Ralph B. James "Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); https://doi.org/10.1117/12.312901
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Cited by 12 scholarly publications.
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KEYWORDS
Sensors

Temperature metrology

Emission spectroscopy

Thermoelectric materials

Data modeling

Electroluminescence

Spectroscopy

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