Paper
1 February 2000 Laser ablation of sapphire with ultrashort pulses
Author Affiliations +
Proceedings Volume 3885, High-Power Laser Ablation II; (2000) https://doi.org/10.1117/12.376955
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
We present the results of our investigations on the surface damage/ablation threshold and processing morphology for sapphire after single and multiple laser pulse irradiation at 800 nm in the picosecond and sub-picosecond duration range. The threshold for ablation drops sharply for multiple laser shot irradiation, due to material dependent incubation effects. We observe two distinctively etch phases: `gentle' and `strong'. Monitoring the mechanism and dynamics of the ion expulsion using combination of time-of-flight mass spectroscopy and femtosecond pump-probe technique, we identified Coulomb explosion as the dominant mechanism for ion emission in the `gentle' etch phase on a time scale of 1 ps. The momenta of the emitted ions are equal under these conditions. After sufficient incubation the damage threshold decreases and the ablation is shifted towards the `strong' phase. The velocity distributions shift to lower values, evidence for `phase explosion' is seen and the ions tend here to equal kinetic energies.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Razvan Stoian, David Ashkenasi, Arkadi Rosenfeld, and Eleanor E. B. Campbell "Laser ablation of sapphire with ultrashort pulses", Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); https://doi.org/10.1117/12.376955
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Cited by 8 scholarly publications and 2 patents.
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KEYWORDS
Ions

Laser ablation

Picosecond phenomena

Pulsed laser operation

Laser damage threshold

Etching

Sapphire

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