Impact of acid/quencher behavior on lithography performance

Hiroshi Fukuda; Keiko T. Hattori; Takuya Hagiwara

doi:10.1117/12.435732

14 September 2001 Impact of acid/quencher behavior on lithography performance

Hiroshi Fukuda, Keiko T. Hattori, Takuya Hagiwara

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435732
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

To describe complex acid/quencher interaction and their mutual diffusion in imaging with chemically amplified resist films, our acid-quencher mutual diffusion/quenching model is implemented to the fast resist image simulator. Accuracy better than 10-nm was obtained over wide varieties of 0.13- node metal-level pattern features. The model also suggested that diffusion of quencher, as well as that of acid, significantly degrades proximity effects and MEF.

Citation Download Citation

Hiroshi Fukuda, Keiko T. Hattori, and Takuya Hagiwara "Impact of acid/quencher behavior on lithography performance", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435732

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