Dr. Hiroshi Fukuda Profile

Dr. Hiroshi Fukuda

at Hitachi High-Tech Corp

SPIE Involvement:

Editorial Board Member: Journal of Micro/Nanolithography, MEMS, and MOEMS | Editorial Board Member: Journal of Micro/Nanopatterning, Materials, and Metrology | Author

Publications (44)

Proceedings Article | 12 November 2024 Presentation + Paper

Presentation + Paper

The k1-factor and stochasticity in EUV lithography: from the perspective of multi-photon-induced collaborative molecular dissolution

Hiroshi Fukuda

Proceedings Volume 13215, 1321504 (2024) https://doi.org/10.1117/12.3033885

KEYWORDS: Lithography, Extreme ultraviolet, Line edge roughness, Molecular interactions, Molecules, Solubility, Image processing, Stochastic processes, Photoresist processing, Extreme ultraviolet lithography, Image resolution

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Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Molecular cluster impact on EUV stochasticity

Hiroshi Fukuda

Proceedings Volume 12953, 129530I (2024) https://doi.org/10.1117/12.3009551

KEYWORDS: Molecular interactions, Line width roughness, Solubility, Molecules, Stochastic processes, Voxels, Photons, Extreme ultraviolet, Dispersion, Spatial frequencies

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Distribution of defective sub-cluster formation probability for stochastic hotspot prediction

Hiroshi Fukuda

Proceedings Volume 12494, 1249403 (2023) https://doi.org/10.1117/12.2655317

KEYWORDS: Stochastic processes, Monte Carlo methods, Voxels, Matrices, Solubility, Principal component analysis, Neural networks, Spatial frequencies, Optical lithography, Inspection, Extreme ultraviolet lithography, Chemically amplified resists, Correlation function

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SPIE Journal Paper | 20 July 2022 Open Access

Open Access

Localized and cascading secondary electron generation as causes of stochastic defects in extreme ultraviolet projection lithography (Erratum)

Hiroshi Fukuda

JM3, Vol. 21, Issue 03, 039801, (July 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.3.039801

KEYWORDS: Stochastic processes, Projection lithography, Extreme ultraviolet, Electron beam lithography, Solids, Scattering

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SPIE Journal Paper | 20 July 2022 Open Access

Open Access

Cascade and cluster of correlated reactions as causes of stochastic defects in extreme ultraviolet lithography (Erratum)

Hiroshi Fukuda

JM3, Vol. 21, Issue 03, 039802, (July 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.3.039802

KEYWORDS: Absorption, Stochastic processes, Monte Carlo methods, Extreme ultraviolet lithography, Diffusion, Selenium, Polymers, Molecules, Computer simulations

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Proceedings Article | 13 June 2022 Presentation

Presentation

Principal component analysis of stochasticity in resist films

Hiroshi Fukuda

Proceedings Volume PC12051, PC120510J (2022) https://doi.org/10.1117/12.2610998

KEYWORDS: Principal component analysis, Wave mechanics, Stochastic processes, Optical simulations, Monte Carlo methods, Lithography, Image transmission, Fourier transforms

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Proceedings Article | 13 June 2022 Presentation

Presentation

Detection and monitoring of defects/anomalies in random circuit patterns using autoencoder

Hiroshi Fukuda, Tsuyoshi Kondo

Proceedings Volume PC12053, PC120530E (2022) https://doi.org/10.1117/12.2611002

KEYWORDS: Scanning electron microscopy, Inspection, Visualization, Signal to noise ratio, Particles, Optical lithography, Logic, Integrated circuits, Image processing, Image acquisition

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SPIE Journal Paper | 5 November 2021 Open Access

Open Access

Anomaly detection in random circuit patterns using autoencoder

Hiroshi Fukuda, Tsuyoshi Kondo

JM3, Vol. 20, Issue 04, 044001, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.044001

KEYWORDS: Inspection, Scanning electron microscopy, Logic, Defect detection, Image processing, Signal to noise ratio, Visualization, Stochastic processes, Optical lithography, Computer programming

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Proceedings Article | 20 September 2020 Presentation + Paper

Presentation + Paper

Dissolution nonlinearity tail degradation with decreased reaction events impacts EUV stochastic defect generations

Hiroshi Fukuda

Proceedings Volume 11517, 115170C (2020) https://doi.org/10.1117/12.2572298

KEYWORDS: Polymers, Stochastic processes, Extreme ultraviolet, Photon transport, Monte Carlo methods, Absorption, Extreme ultraviolet lithography, Scattering, Diffusion, Lithography

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SPIE Journal Paper | 12 May 2020 Open Access

Open Access

Cascade and cluster of correlated reactions as causes of stochastic defects in extreme ultraviolet lithography

Hiroshi Fukuda

JM3, Vol. 19, Issue 02, 024601, (May 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.2.024601

KEYWORDS: Stochastic processes, Monte Carlo methods, Polymers, Diffusion, Absorption, Extreme ultraviolet lithography, Extreme ultraviolet, Selenium, Photon transport, Photomasks

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Proceedings Article | 23 March 2020 Paper

Paper

Cluster of correlated reactions as a cause for various types of stochastic defects in extreme ultraviolet lithography

Hiroshi Fukuda

Proceedings Volume 11323, 113230H (2020) https://doi.org/10.1117/12.2548241

KEYWORDS: Stochastic processes, Absorption, Extreme ultraviolet lithography, Diffusion, Photomasks, Polymers, Extreme ultraviolet, Monte Carlo methods, Chemically amplified resists

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Proceedings Article | 26 September 2019 Paper

Paper

Estimating extremely low probability of stochastic defect in extreme ultraviolet lithography from critical dimension distribution measurement (Poster presentation)

Hiroshi Fukuda, Yoshinori Momonoi, Kei Sakai

Proceedings Volume 11147, 111471A (2019) https://doi.org/10.1117/12.2535664

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Critical dimension metrology, Inspection, Optical inspection, Chemical reactions, Monte Carlo methods, Photomasks, Semiconducting wafers, Ranging

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Proceedings Article | 26 September 2019 Paper

Paper

Stochastic defect generation in EUV lithography analyzed by spatially correlated probability model, reaction-limited and scattering-limited?

Hiroshi Fukuda

Proceedings Volume 11147, 1114716 (2019) https://doi.org/10.1117/12.2535663

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Monte Carlo methods, Optimization (mathematics), Genetic algorithms, Computer simulations

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Stochastic pattern defects are becoming a major concern in the future EUV lithography as their probabilities exponentially increase with decreasing feature size and are highly sensitive to process/mask variations. We speculated that the defect generation closely relates to the spatial localization in three processes; (a) photon absorption, (b) secondary electron (SE) generation from one photon, and (c) catalytic reaction (for chemically amplified resists). We have previously modeled and analyzed stochastic defects based on two mechanisms: accidental connections of spot defects caused from inhomogeneous secondary electron generation (shot noise), and strings of SE generated along long trajectories of photoelectron (mechanism B). These two are extreme cases, however, and real situations are an interplay between these two. In this paper, we highlight the importance of correlation among reactions. Our fully coupled Monte Carlo simulation shows that reactions induced by a particular photon are spatially aggregated to form a cluster and the solubility of polymers within that cluster is governed by this photon when diffusion range ~ average distance between sites of non-correlated SE or acid generations (induced by independent photons). Here, we extend our previous probability models based on Monte Carlo results to include the correlation longer than polymer size by introducing a spatially correlated probability, which explains the impact of correlated reaction on defect generation. Additionally, we also account for the effects of quenchers and densely packed polymers. The model is quantitatively fit reported experimental results using material parameters within practical ranges, and the observed exponential dependences of defect probabilities on delineated feature sizes and on dose-to-sizes are reproduced. Predicted defect probabilities mainly depend on resist feature sizes, regardless of the resolution capability of imaging optics. Though reaction profiles (~spot defect probability profiles) are scaled with shrinking the target size by increasing NA, the area defect probability is obtained as a direct product of spot defect probabilities, which increases with decreasing defect area. To enhance mixing of non-correlated reactions and to decrease defect probabilities, we need to increase the volumetric density of photon absorption events or to increase a diffusion blur. However, the latter practically degrades image profiles and increases defect probabilities. Thus, reaction density required for flipping polymer/molecular solubility and exposure dosage need be increased as well as utilizing quenching effects, in particular when shrinking target size.

SPIE Journal Paper | 3 May 2019 Open Access

Open Access

Estimating extremely low probability of stochastic defect in extreme ultraviolet lithography from critical dimension distribution measurement

Hiroshi Fukuda, Yoshinori Momonoi, Kei Sakai

JM3, Vol. 18, Issue 02, 024002, (May 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.2.024002

KEYWORDS: Stochastic processes, Inspection, Cadmium, Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Statistical analysis, Critical dimension metrology, Integrated circuits, Defect inspection

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Proceedings Article | 26 March 2019 Paper

Paper

Impact of asymmetrically localized and cascading secondary electron generation on stochastic defects in EUV lithography

Hiroshi Fukuda

Proceedings Volume 10957, 109570G (2019) https://doi.org/10.1117/12.2514018

KEYWORDS: Stochastic processes, Absorption, Monte Carlo methods, Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Optimization (mathematics), Genetic algorithms, Physics, Chemically amplified resists, Lithography

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SPIE Journal Paper | 8 February 2019 Open Access

Open Access

Localized and cascading secondary electron generation as causes of stochastic defects in extreme ultraviolet projection lithography

Hiroshi Fukuda

JM3, Vol. 18, Issue 01, 013503, (February 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.1.013503

KEYWORDS: Extreme ultraviolet, Stochastic processes, Absorption, Scattering, Extreme ultraviolet lithography, Monte Carlo methods, Projection lithography, Photon transport, Deep ultraviolet, Diffusion

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SPIE Journal Paper | 23 July 2018

Measurement of pattern roughness and local size variation using CD-SEM

Hiroshi Fukuda, Takahiro Kawasaki, Hiroki Kawada, Kei Sakai, Takashi Kato, Satoru Yamaguchi, Masami Ikota, Yoshinori Momonoi

JM3, Vol. 17, Issue 04, 041004, (July 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.041004

KEYWORDS: Line edge roughness, Scanning electron microscopy, Edge detection, Signal to noise ratio, Detection and tracking algorithms, Critical dimension metrology, Image filtering, Stochastic processes, Metrology, Reliability

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Proceedings Article | 13 March 2018 Paper

Paper

Measurement of pattern roughness and local size variation using CD-SEM: current status

Hiroshi Fukuda, Takahiro Kawasaki, Hiroki Kawada, Kei Sakai, Takashi Kato, Satoru Yamaguchi, Masami Ikota, Yoshinori Momonoi

Proceedings Volume 10585, 105850H (2018) https://doi.org/10.1117/12.2299633

KEYWORDS: Line edge roughness, Scanning electron microscopy, Edge detection, Signal to noise ratio, Critical dimension metrology, Detection and tracking algorithms, Metrology, Reliability, Process control, Image filtering

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Proceedings Article | 2 April 2014 Paper

Paper

Cross-sectional profile prediction from top-view SEM images based on root-cause decomposition of line-edge roughness

Hiroshi Fukuda

Proceedings Volume 9050, 90500M (2014) https://doi.org/10.1117/12.2045457

KEYWORDS: Line edge roughness, Scanning electron microscopy, Surface roughness, Edge detection, Metrology, Critical dimension metrology, Signal detection, Spatial frequencies, Edge roughness, Atomic force microscopy

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Proceedings Article | 12 April 2007 Paper

Paper

Distribution control of protecting groups and its effect on LER for EUV molecular resist

Daiju Shiono, Hideo Hada, Hiroto Yukawa, Hiroaki Oizumi, Iwao Nishiyama, Kyoko Kojima, Hiroshi Fukuda

Proceedings Volume 6519, 65193U (2007) https://doi.org/10.1117/12.711311

KEYWORDS: Line edge roughness, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Scanning electron microscopy, Analytical research, Optical lithography, Silicon films, Silicon

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Proceedings Article | 29 March 2006 Paper

Paper

Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50-nm resolution capability

Kyoko Kojima, Takashi Hattori, Hiroshi Fukuda, Taku Hirayama, Daiju Shiono, Hideo Hada, Junichi Onodera

Proceedings Volume 6153, 61530G (2006) https://doi.org/10.1117/12.656112

KEYWORDS: Line edge roughness, Lithography, Scanning electron microscopy, Etching, FT-IR spectroscopy, Potassium, Silicon, Extreme ultraviolet lithography, Inspection, Polymers

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Proceedings Article | 29 March 2006 Paper

Paper

Molecular resists based on cholate derivatives for electron-beam lithography

Daiju Shiono, Taku Hirayama, Hideo Hada, Junichi Onodera, Tadashi Arai, Atsuko Yamaguchi, Kyoko Kojima, Hiroshi Shiraishi, Hiroshi Fukuda

Proceedings Volume 6153, 61532D (2006) https://doi.org/10.1117/12.656949

KEYWORDS: Lithography, Etching, Silicon, Silicon films, Semiconducting wafers, FT-IR spectroscopy, Line edge roughness, Absorbance, Glasses, Argon

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Proceedings Article | 10 May 2005 Paper

Paper

Impact of long-period line-edge roughness (LER) on accuracy in CD measurement

Atsuko Yamaguchi, Hiroshi Fukuda, Hiroki Kawada, Takashi Iizumi

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.602674

KEYWORDS: Critical dimension metrology, Line edge roughness, Inspection, Line width roughness, Semiconducting wafers, Photomasks, Cadmium, Monte Carlo methods, Lithography, Transistors

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Proceedings Article | 4 May 2005 Paper

Paper

Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion

Taku Hirayama, Daiju Shiono, Shogo Matsumaru, Toshiyuki Ogata, Hideo Hada, Junichi Onodera, Tadashi Arai, Toshio Sakamizu, Atsuko Yamaguchi, Hiroshi Shiraishi, Hiroshi Fukuda, Mitsuru Ueda

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600416

KEYWORDS: Line edge roughness, Ions, Scanning electron microscopy, Lithography, Etching, Polymers, Electron beams, Silicon, Semiconducting wafers, Inspection

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Proceedings Article | 25 October 2004 Paper

Paper

Nanometric mechaphotonics for innovative information and communications systems

Yoshitada Katagiri, Hiroshi Fukuda, Hiroyuki Shinojima, Yoshiaki Nakano, Masashi Nakao, Mitsuru Naganuma

Proceedings Volume 5604, (2004) https://doi.org/10.1117/12.578616

KEYWORDS: Metals, Photons, Nanophotonics, Electronics, Electrons, Waveguides, Computing systems, Radio propagation, Telecommunications, Nanostructures

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Proceedings Article | 20 August 2004 Paper

Paper

Proximity-effect correction software for EPL using the pattern classify method

Shigeki Mori, Akio Sato, Kyoji Nakajo, Masanori Shoji, Naomi Shimada, Hirokazu Sambayashi, Kenzo Goto, Fumio Murai, Hiroshi Fukuda

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557820

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Projection lithography, Software development, Silicon, Scattering, Monte Carlo methods, Optical proximity correction, Analytical research

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Proceedings Article | 24 May 2004 Paper

Paper

Detection method for a T-topped profile in resist patterns by CD-SEM

Atsuko Yamaguchi, Hiroshi Fukuda, Osamu Komuro, Shozo Yoneda, Takashi Iizumi

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534618

KEYWORDS: Line edge roughness, Scanning electron microscopy, Edge roughness, Optical lithography, Inspection, Image analysis, Statistical analysis, Transistors, Critical dimension metrology, Lithography

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Proceedings Article | 24 May 2004 Paper

Paper

Metrology of LER: influence of line-edge roughness (LER) on transistor performance

Atsuko Yamaguchi, Katsuhiko Ichinose, Satoshi Shimamoto, Hiroshi Fukuda, Ryuta Tsuchiya, Kazuhiro Ohnishi, Hiroki Kawada, Takashi Iizumi

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534631

KEYWORDS: Line edge roughness, Line width roughness, Critical dimension metrology, Transistors, Inspection, Metrology, Semiconducting wafers, Lithography, Computer simulations, Fourier transforms

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Proceedings Article | 28 August 2003 Paper

Paper

Proximity-effect correction for EPL by using multiple pattern-area-density maps and pattern classification

Fumio Murai, Hiroshi Fukuda, Shigeki Mori, Akio Sato, Kyoji Nakajo

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504235

KEYWORDS: Image classification, Backscatter, Data processing, Optical aberrations, Electron beams, Data corrections, Lithography, Monochromatic aberrations, Double patterning technology, Projection lithography

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Proceedings Article | 12 June 2003 Paper

Paper

Development of high-performance negative-tone resists for 193-nm lithography

Takashi Hattori, Yoshiyuki Yokoyama, Kaori Kimura, Ryoko Yamanaka, Toshihiko Tanaka, Hiroshi Fukuda

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485203

KEYWORDS: Polymers, Lithography, Phase shifts, Carbon, Etching, Polymer thin films, Photomasks, Distortion, Transparency, Polymerization

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Proceedings Article | 2 June 2003 Paper

Paper

Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance

Atsuko Yamaguchi, Ryuta Tsuchiya, Hiroshi Fukuda, Osamu Komuro, Hiroki Kawada, Takashi Iizumi

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483519

KEYWORDS: Line edge roughness, Transistors, Inspection, Scanning electron microscopy, Device simulation, Statistical analysis, Measurement devices, Molybdenum, Dry etching, Semiconducting wafers

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Proceedings Article | 30 July 2002 Paper

Paper

LER as structural fluctuation of resist reaction and developer percolation

Hiroshi Fukuda, Atsuko Yamaguchi

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474519

KEYWORDS: Line edge roughness, Diffusion, Polymers, Molecules, Chemically amplified resists, Photoresist processing, Chemical analysis, Analytical research, Convolution, Process modeling

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Proceedings Article | 30 July 2002 Paper

Paper

CD control in phase-edge lithography: the effects of lens aberration and pattern layout

Takuya Hagiwara, Katsuya Hayano, Akemi Moniwa, Hiroshi Fukuda

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474480

KEYWORDS: Critical dimension metrology, Optical proximity correction, Lithography, Photomasks, Optical lithography, Phase shifts, Image processing, Model-based design, Etching, Monochromatic aberrations

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Proceedings Article | 30 July 2002 Paper

Paper

Accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes

Keiko Hattori, Jun Abe, Hiroshi Fukuda

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474505

KEYWORDS: Diffusion, Computer simulations, Cadmium sulfide, Process modeling, Semiconducting wafers, 3D modeling, Absorption, Chemically amplified resists, Bottom antireflective coatings, Wafer-level optics

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Proceedings Article | 14 September 2001 Paper

Paper

Impact of acid/quencher behavior on lithography performance

Hiroshi Fukuda, Keiko Hattori, Takuya Hagiwara

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435732

KEYWORDS: Diffusion, Lithography, Photoresist processing, Performance modeling, Image processing, Optical proximity correction, Chemically amplified resists, Critical dimension metrology, Photomasks, Imaging spectroscopy

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Proceedings Article | 14 September 2001 Paper

Paper

Patterning of random interconnect using double exposure of strong-type PSMs

Hiroshi Fukuda, Takuya Hagiwara

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435767

KEYWORDS: Optical lithography, Double patterning technology, Optical proximity correction, Logic, Logic devices, Image quality, Printing, Phase shifts, Computer simulations, Feature extraction

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Proceedings Article | 5 July 2000 Paper

Paper

0.3-um pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations

Hiroshi Fukuda, Shoji Hotta

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389024

KEYWORDS: Photomasks, Optical proximity correction, Logic, Phase shifts, Deep ultraviolet, Optical lithography, Semiconducting wafers, Reticles, Lithography, Optical calibration

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Proceedings Article | 5 July 2000 Paper

Paper

Lens aberration measurement technique using attentuated phase-shifting mask

Akira Imai, Katsuya Hayano, Hiroshi Fukuda, Naoko Asai, Norio Hasegawa

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388964

KEYWORDS: Monochromatic aberrations, Photomasks, Semiconducting wafers, Phase shifts, Scanning electron microscopy, Time metrology, Inspection, Defect inspection, Overlay metrology, Optical lithography

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Proceedings Article | 5 July 2000 Paper

Paper

Precise CD control of 140-nm gate patterns using phase-edge PSM

Shoji Hotta, Osamu Inoue, Hiroshi Fukuda, Norio Hasegawa

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388973

KEYWORDS: Critical dimension metrology, Photomasks, Chromium, Control systems, Phase shifts, Logic devices, Excimer lasers, Optical lithography, Dry etching, Optical proximity correction

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Proceedings Article | 25 August 1999 Paper

Paper

Auxiliary pattern generation to cancel unexpected images at sidelobe overlap regions in attenuated phase-shift masks

Kyoji Nakajo, Junya Sakemi, Hiroshi Fukuda, Tsuneo Terasawa, Norio Hasegawa, Eiji Tsujimoto

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360193

KEYWORDS: Photomasks, Transmittance, Phase shifts, Analytical research, Information operations, Optical lithography, X-rays

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Proceedings Article | 25 August 1999 Paper

Paper

Enhancement of hierarchical mask data design system (PROPHET)

Takahiro Watanabe, Eiji Tsujimoto, Keiji Maeda, Hiroshi Fukuda

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360191

KEYWORDS: Process engineering, Optical testing, Image processing, Diffusion, Semiconducting wafers, Image enhancement, Photoresist processing, Optical proximity correction, Phase shifts, Photomasks

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Proceedings Article | 29 June 1998 Paper

Paper

Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design

Hiroshi Fukuda, Keiko Hattori

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310745

KEYWORDS: Diffusion, Photomasks, Optical proximity correction, Image processing, Optical lithography, Chemically amplified resists, Phase shifts, Lithographic illumination, Diffraction, Semiconducting wafers

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Proceedings Article | 7 June 1996 Paper

Paper

Effects of radially nonsymmetric pupil filters and multiple-pupil exposure

Rudolf von Buenau, Hiroshi Fukuda, Tsuneo Terasawa

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240911

KEYWORDS: Image filtering, Photomasks, Transmittance, Image enhancement, Optical filters, Point spread functions, Phase shifts, Opacity, Image resolution, Lithography

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Proceedings Article | 1 June 1990 Paper

Paper

Phase-shifting mask and FLEX method for advanced photolithography

Hiroshi Fukuda, Akira Imai, Shinji Okazaki

Proceedings Volume 1264, (1990) https://doi.org/10.1117/12.20176

KEYWORDS: Phase shifts, Photoresist processing, Image processing, Optical lithography, Image quality, Excimer lasers, Image acquisition, Image resolution, Spatial frequencies, Photomasks

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Showing 5 of 44 publications

Conference Committee Involvement (1)

Optical Microlithography XVI

25 February 2003 | Santa Clara, California, United States

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