Semiconductor Lasers Optically Pumped By Injection Lasers

M. A. Duguay; T. C. Damen

doi:10.1117/12.966073

28 November 1983 Semiconductor Lasers Optically Pumped By Injection Lasers

M. A. Duguay, T. C. Damen

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966073
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Ultrashort cavity semiconductor lasers have been pumped at room temperature by AℓGaAs injection lasers. Peak powers of up to 10 mW were obtained in InP in the form of single longitudinal mode subnanosecond pulses. Conversion efficiency from the injection laser pump power to lasing power was up to 8 percent in InP. Tuning over 150 A° was seen.

Citation Download Citation

M. A. Duguay and T. C. Damen "Semiconductor Lasers Optically Pumped By Injection Lasers", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966073

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