End-point detection during the realization of deep P+ zones by Al thermomigration

Jean-Marie R. Dilhac; Benjamin Morillon; Christian Ganibal; Christine Anceau

doi:10.1117/12.425241

20 April 2001 End-point detection during the realization of deep P⁺zones by Al thermomigration

Jean-Marie R. Dilhac, Benjamin Morillon, Christian Ganibal, Christine Anceau

Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425241
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

A new method for creating deep junctions extending through the whole thickness of a wafer has recently been demonstrated. Applications are in the field of high power devices. The method uses the thermomigration of melted Al/Si droplets in silicon and allows function electrical isolation. This process requires a specific Rapid Thermal Processing equipment. The purpose of this paper is to discuss the control of the process by end-point detection, that is the optical in situ detection of the emergence of the melted alloy once thermomigration is completed. For this purpose, in situ laser reflectometry and video observation have been used. Experimental results are presented and discussed.

Citation Download Citation

Jean-Marie R. Dilhac, Benjamin Morillon, Christian Ganibal, and Christine Anceau "End-point detection during the realization of deep P⁺zones by Al thermomigration", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425241

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