Paper
17 October 2003 Dynamics study of multiwavelength excitation process using F2 and KrF excimer lasers
Kotaro Obata, Koji Sugioka, Takahiro Inamura, Hiroshi Takai, Koichi Toyoda, Katsumi Midorikawa
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Abstract
Ablation dynamics of fused silica by multiwavelength excitation process using F2 and KrF excimer laser has been investigated by energy analyzed mass spectrometry of ablated species. The number of Si ion generated by multiwavelength excitation process corresponds to that by single-F2 laser ablation and to approximately 2.1 times larger than that by single-KrF excimer laser ablation. In addition, kinetic energy distribution of Si+ ablated by multiwavelength excitation process shows almost same as that by single-F2 laser ablation. We regard that absorption of KrF excimer laser by excited state generated by F2 laser (excited-state absorption: ESA) causes similar electron excitation process to single-F2 laser irradiation, resulting in enhancement of Si ion with higher kinetic energy and then in high-quality ablation.
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Kotaro Obata, Koji Sugioka, Takahiro Inamura, Hiroshi Takai, Koichi Toyoda, and Katsumi Midorikawa "Dynamics study of multiwavelength excitation process using F2 and KrF excimer lasers", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); https://doi.org/10.1117/12.479542
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KEYWORDS
Laser ablation

Excimer lasers

Silicon

Ions

Silica

Laser irradiation

Absorption

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