Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-µm wavelength range

Priyalal S. Wijewarnasuriya; Nibir K. Dhar; Arvind I. D'Souza; Maryn G. Stapelbroek; Dennis D. Edwall; Jose M. Arias; Jagmohan Bajaj

doi:10.1117/12.540997

30 August 2004 Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range

Priyalal S. Wijewarnasuriya, Nibir K. Dhar, Arvind I. D'Souza, Maryn G. Stapelbroek, Dennis D. Edwall, Jose M. Arias, Jagmohan Bajaj

Author Affiliations +

Proceedings Volume 5406, Infrared Technology and Applications XXX; (2004) https://doi.org/10.1117/12.540997
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

An attempt is made to connect the material parameters of Hg_1-xCd_xTe layer growth to the parameters measured following photovoltaic detector fabrication. We found that the Cd composition X value extracted from spectral response measurements on detectors at 78 K are lower than the X values obtained from the room temperature transmission measurements, or the X value used to fit the measured material minority carrier lifetime versus temperature data. The lateral collection length L_c that determines the thermally generated carriers that contribute to the diffusion current and L_opt extracted from the "flood-illuminated" to "focused-spot" photocurrent ratio are in excellent agreement. Devices exhibit near theoretical R_oA uniformity at 77K for MWIR, LWIR and VLWIR. R_oA_opt was also found to be uniform throughout the range of detector dimensions measured such as 8 μm diameter circular to 250 μm x 250 μm square. Median R_oA_opt values are 1266, 66 and 0.75 ohm-cm² for the 9.7, 11.3 and 15.4 μm cutoff wavelengths respectively. The uniformity in R_oA_opt confirms that the detector performance is limited by the bulk properties of the material, and not by surface effects.

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Priyalal S. Wijewarnasuriya, Nibir K. Dhar, Arvind I. D'Souza, Maryn G. Stapelbroek, Dennis D. Edwall, Jose M. Arias, and Jagmohan Bajaj "Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.540997

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KEYWORDS

Sensors

Diffusion

Quantum efficiency

Photovoltaic detectors

Temperature metrology

Cadmium

Mercury cadmium telluride

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