Paper
16 January 2006 Recent developments of quantum detectors in the terahertz range
Author Affiliations +
Proceedings Volume 6038, Photonics: Design, Technology, and Packaging II; 60380E (2006) https://doi.org/10.1117/12.651336
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia
Abstract
Gallium-doped germanium (Ge:Ga) extrinsic photoconductor is one of a excellent quantum detector in the terahertz range. Design of a novel wave-guide Ge:Ga photoconductor integrated with silicon solid immersion lens and fabrication technology for linear arrays is presented. The possibilities to extend this technology for realizing large format Ge:Ga waveguide 2D-array detector are discussed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iwao Hosako, Norihisa Hiromoto, Yasuo Doi, Mikhail Patrashin, and Patrick Merken "Recent developments of quantum detectors in the terahertz range", Proc. SPIE 6038, Photonics: Design, Technology, and Packaging II, 60380E (16 January 2006); https://doi.org/10.1117/12.651336
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KEYWORDS
Sensors

Waveguides

Terahertz radiation

Detector arrays

Germanium

Photoresistors

Silicon

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