Heating Of Gaas And Inp By Incoherent Radiation

Thomas R. Block; Craig W. Farley; Tae S. Kim; Steve D. Lester; Ben G. Streetman

doi:10.1117/12.961205

26 June 1986 Heating Of GaAs And InP By Incoherent Radiation

Thomas R. Block, Craig W. Farley, Tae S. Kim, Steve D. Lester, Ben G. Streetman

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961205
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

An investigation of the heating behavior of GaAs and InP in a Rapid Thermal Annealing (RTA) system shows a significant variation in the temperature response of these materials. These compound semiconductors are heated with incoherent light in an RTA system where a Si sample is used for temperature feedback. The temperatures of GaAs and InP samples thermally isolated from the Si control sample during heating may overshoot or undershoot the desired temperature by hundreds of degrees. When the samples are thermally connected to the Si control sample by means of a susceptor, the temperatures of the III-V semiconductors follow the programmed temperature closely. Much of the variation in temperature response can be correlated with free carrier concentrations in the materials, but other material properties also play a role. This significant variation in temperature response has practical implications for the design and application of RTA systems.

Citation Download Citation

Thomas R. Block, Craig W. Farley, Tae S. Kim, Steve D. Lester, and Ben G. Streetman "Heating Of GaAs And InP By Incoherent Radiation", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961205

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