Paper
29 March 2010 Study on approaches for improvement of EUV-resist sensitivity
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Abstract
Several methods to improve sensitivity of EUV resist, with a couple of key points of acid generation efficiency and deprotection reaction efficiency. Larger loading of PAG to increase the secondary electron absorption possibility, cation unit design to lower the lowest unoccupied molecular orbital of cation, and lowering ionization potential of polymer to enable efficient secondary electron generation, were discussed in the viewpoint of acid generation efficiency. Larger size of anion structure design on PAG was applied to special formulation of small loading of quencher to minimize necessary generated acid concentration to give enough de-protection reaction amount, and to higher PEB temperature resist process to maximize de-protection reaction efficiency.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, and Takayuki Itou "Study on approaches for improvement of EUV-resist sensitivity", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763909 (29 March 2010); https://doi.org/10.1117/12.846031
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Cited by 10 scholarly publications.
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KEYWORDS
Polymers

Diffusion

Extreme ultraviolet

Absorption

Electroluminescence

Ionization

Extreme ultraviolet lithography

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