Dr. Hideaki Tsubaki Profile

Dr. Hideaki Tsubaki

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Author

Publications (18)

Proceedings Article | 27 March 2017 Presentation + Paper

Presentation + Paper

Challenges and progress in low defectivity for advanced ArF and EUV lithography processes using surface localized material technology

Michihiro Shirakawa, Hideaki Tsubaki, Hajime Furutani, Wataru Nihashi, Naohiro Tango, Kazuhiro Marumo, Kei Yamamoto, Hidenori Takahashi, Akiyoshi Goto, Mitsuhiro Fujita

Proceedings Volume 10146, 101460E (2017) https://doi.org/10.1117/12.2257956

KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Photoresist processing, Image processing, Immersion lithography, Chemically amplified resists, High volume manufacturing, Photomasks, Scanners, Polymers, Research management, Semiconducting wafers, Fluorine, Coating

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Proceedings Article | 18 March 2016 Paper

Paper

Negative-tone imaging with EUV exposure toward 13nm hp

Hideaki Tsubaki, Wataru Nihashi, Toru Tsuchihashi, Kei Yamamoto, Takahiro Goto

Proceedings Volume 9776, 977608 (2016) https://doi.org/10.1117/12.2218761

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Bridges, Extreme ultraviolet, Chemically amplified resists, Lithography, Line width roughness, Image resolution, Polymers, Mechanics, Absorption, Photoresist processing, Diffusion, Electroluminescence

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Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using a specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm². Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm² by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm² to 24 mJ/cm². On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photo-acid generator (PAG) and polymer. Conventional EUV absorber comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

Proceedings Article | 13 March 2015 Paper

Paper

Negative-tone imaging with EUV exposure for 14nm hp and beyond

Hideaki Tsubaki, Wataru Nihashi, Toru Tsuchihashi, Toru Fujimori, Makoto Momota, Takahiro Goto

Proceedings Volume 9422, 94220N (2015) https://doi.org/10.1117/12.2085696

KEYWORDS: Extreme ultraviolet lithography, Polymers, Photoresist materials, Photoresist developing, Bridges, Optical lithography, Lithography, Extreme ultraviolet, Capillaries, Digital signal processing

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Manipulation of dissolution properties by changing organic solvent developer and rinse material provides a novel technology to obtain fine pattern beyond the limitation of imaging system based on alkaline developer. QCM study showed no swelling character in negative-tone imaging (NTI) process even for current developer of n-butyl acetate (nBA). Actually, NTI process has shown advantages on resolution and line-width roughness (LWR) in loose pitch around 30 ~ 45 nm hp as a consequence of its non-swelling character. On the other hand, bridge and collapse limited its resolution below 20 nm hp, indicating that non-negligible amount of swelling still exists for tight pitch resolution. We investigated effects of solubility parameter of organic solvents on resolution below 20 nm hp. A bridge was reduced with a decrease in the solubility parameter dp from nBA. On the other hand, much lower dp caused film remaining due to its extremely slow Rmax. Based on these results, we newly developed FN-DP301 containing organic solvent with smaller dp than nBA. Although rinse solvent gave negligible effects on bridge, there is a clear improvement on pattern collapse only in case of using new rinse solvent of FN-RP311. Lithographic performances of NTI process using nBA and FN-DP301 together with the other organic solvents were described in this paper under exposures with an E-beam and a EUV light. It is emphasized that 14 nm hp resolution was obtained only using FN-DP301 as a developer and FN-RP311 as a rinse under E-beam exposure. NTI showed 43% faster photospeed in comparison with PTI at 16 nm hp, indicating that NTI is applicable to obtain high throughput with maintaining resolution. In addition, sub-20 nm trench was obtained using NTI without bridge under EUV exposure, all of which are attributed to the low swelling character of NTI process. Similarly, NTI was able to print 20 nm dots using NXE:3100 with only a little peeling. Conversely CH patterning was significantly worse with NTI compared to PTI, that is, only 36 nm contacts with 60 nm pitch was resolved under EUV exposure.

Proceedings Article | 17 April 2014 Paper

Paper

Novel EUV resist materials design for 14nm half pitch and below

Hideaki Tsubaki, Shinji Tarutani, Toru Fujimori, Hiroo Takizawa, Takahiro Goto

Proceedings Volume 9048, 90481E (2014) https://doi.org/10.1117/12.2046205

KEYWORDS: Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Line width roughness, Lithography, Diffusion, Optical lithography, Absorption, Surface roughness, Photoresist processing

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Polymers with a different Tg and activation energy were prepared to clarify influences of acid diffusion on resolution at 15 nm half-pitch (hp) and 14 nm hp using a EUV micro-field exposure tool (MET) at LBNL. Resolution on such a narrow pattern was limited by collapse and pinching. Clear relationship between pinching numbers and polymer Tg indicates that acid diffusion is one of major contributors on the pinching. In addition, polymers with a low thermal activation energy (Ea) on deprotection were effective for reducing pinching. This is probably originated from its high chemically amplification character even in low post-exposure bake (PEB) temperature to obtain both large chemical contrast and short acid diffusion. On the other hand, a good correlation between a cleanable outgassing amount and Ea indicates trade-off relationship between outgassing and resolution. Advantages of n-butyl acetate (nBA) developer have been investigated in viewpoint of dissolution uniformity. Surface roughness of a non-patterned resist film at half-exposed area, which was well correlated with LWR, was measured by AFM as indicator of uniformity in development process. To avoid any differences in resist chemistry other than development process, cross linking negative tone resist was applied for this study. The surface roughness obtained by nBA, which is conventional negative-tone imaging (NTI) developer, was 32 % lower than that obtained by 2.38 % TMAH solution. NTI resist system with a nBA developer and optimized resist reduced LWR from 4.8 nm to 3.0 nm in comparison with conventional positive tone resist with a 2.38 % TMAH developer. In addition, advantage on semi-dense trench patterning was well defined. New EUV sensitizer with 1.15 times higher EUV absorption resulted in 1.15 times higher acid yield by EUV exposure. Lithography performance of the new EUV sensitizer has been investigated by MET at SEMATECH Albany. Sensitivity was indeed improved from 20 mJ/cm² to 17 mJ/cm² according to the acid yield increase, but resolution was significantly degraded.

Proceedings Article | 1 April 2013 Paper

Paper

EUV resist materials design for 15nm half pitch and below

Hideaki Tsubaki, Shinji Tarutani, Naoki Inoue, Hiroo Takizawa, Takahiro Goto

Proceedings Volume 8679, 867905 (2013) https://doi.org/10.1117/12.2011357

KEYWORDS: Diffusion, Extreme ultraviolet lithography, Polymers, Line width roughness, Extreme ultraviolet, Contamination, Electron beam lithography, Semiconducting wafers, Lithography, Scanning electron microscopy

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Proceedings Article | 29 March 2013 Paper

Paper

LWR study on resist formulation parameters

Kyoungyoung Cho, Shinji Tarutani, Naoki Inoue, Hideaki Tsubaki, Mark Neisser

Proceedings Volume 8682, 868217 (2013) https://doi.org/10.1117/12.2011386

KEYWORDS: Line width roughness, Polymers, Amplifiers, Diffusion, Line edge roughness, Extreme ultraviolet, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Molecules

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Proceedings Article | 8 March 2012 Paper

Paper

EUV resist materials for 20nm and below half-pitch applications

Hideaki Tsubaki, Shinji Tarutani, Hiroo Takizawa, Takahiro Goto

Proceedings Volume 8325, 832509 (2012) https://doi.org/10.1117/12.916378

KEYWORDS: Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Line width roughness, Electron beam lithography, Capillaries, Lithography, Research management, Diffusion

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Proceedings Article | 16 April 2011 Paper

Paper

Characterizing polymer bound PAG-type EUV resist

Hiroshi Tamaoki, Shinji Tarutani, Hideaki Tsubaki, Toshiya Takahashi, Naoki Inoue, Tooru Tsuchihashi, Hiroo Takizawa, Hidenori Takahashi

Proceedings Volume 7972, 79720A (2011) https://doi.org/10.1117/12.879394

KEYWORDS: Polymers, Diffusion, Line width roughness, Extreme ultraviolet lithography, Lithography, Semiconducting wafers, Nanoimprint lithography, Extreme ultraviolet, Polymer thin films, Research management

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Proceedings Article | 8 April 2011 Paper

Paper

Unraveling the effect of resist composition on EUV optics contamination

I. Pollentier, I. Neira, A.-M. Goethals, R. Gronheid, S. Tarutani, H. Tamaoki, H. Tsubaki, T. Takahashi

Proceedings Volume 7969, 79692L (2011) https://doi.org/10.1117/12.881214

KEYWORDS: Contamination, Polymers, Medium wave, Extreme ultraviolet lithography, Extreme ultraviolet, EUV optics, Photoresist materials, Resist chemistry, Chemistry, Semiconducting wafers

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Proceedings Article | 31 March 2010 Paper

Paper

Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system

Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, Takayuki Itou, Kentaro Matsunaga, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7639, 76391O (2010) https://doi.org/10.1117/12.846033

KEYWORDS: Polymers, Diffusion, Lithography, Line width roughness, Semiconducting wafers, Polymer thin films, Extreme ultraviolet lithography, Research management, Optical lithography, Photoresist processing

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Proceedings Article | 30 March 2010 Paper

Paper

Study on approaches for improvement of EUV-resist sensitivity

Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, Takayuki Itou

Proceedings Volume 7639, 763909 (2010) https://doi.org/10.1117/12.846031

KEYWORDS: Polymers, Diffusion, Extreme ultraviolet, Absorption, Ionization, Electroluminescence, Extreme ultraviolet lithography, Yield improvement, Semiconducting wafers, Research management

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Proceedings Article | 1 April 2009 Paper

Paper

Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography

Robert Sulc, James Blackwell, Todd Younkin, E. Steve Putna, Katherine Esswein, Antonio DiPasquale, Ryan Callahan, Hideaki Tsubaki, Tooru Tsuchihashi

Proceedings Volume 7273, 72733R (2009) https://doi.org/10.1117/12.814279

KEYWORDS: Extreme ultraviolet lithography, Lithography, Photoresist materials, Extreme ultraviolet, Optical lithography, Line width roughness, Molecules, Ionization, Semiconducting wafers, Lithium

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Proceedings Article | 1 April 2009 Paper

Paper

Effect of resist polymer molecular weight on EUV lithography

Hideaki Tsubaki, Katsuhiro Yamashita, Hidenori Takahashi, Daisuke Kawamura, Toshiro Itani

Proceedings Volume 7273, 72733S (2009) https://doi.org/10.1117/12.812204

KEYWORDS: Polymers, Line width roughness, Diffusion, Extreme ultraviolet lithography, Photomasks, Electroluminescence, Semiconducting wafers, Glasses, Extreme ultraviolet, Image resolution

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Proceedings Article | 1 April 2009 Paper

Paper

Resist material design to improve sensitivity in EUV lithography

Hideaki Tsubaki, Tooru Tsuchihashi, Katsuhiro Yamashita, Tomotaka Tsuchimura

Proceedings Volume 7273, 72733P (2009) https://doi.org/10.1117/12.814086

KEYWORDS: Polymers, Extreme ultraviolet lithography, Yield improvement, Extreme ultraviolet, Ionization, Line width roughness, Semiconducting wafers, Electrodes, Absorption, Chemically amplified resists

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Proceedings Article | 1 April 2009 Paper

Paper

Resolution and LWR improvements by acid diffusion control in EUV lithography

Hideaki Tsubaki, Tooru Tsuchihashi, Tomotaka Tsuchimura

Proceedings Volume 7273, 72731K (2009) https://doi.org/10.1117/12.814067

KEYWORDS: Diffusion, Line width roughness, Extreme ultraviolet lithography, Line edge roughness, Polymers, Electroluminescence, Semiconducting wafers, Electron beam lithography, Lithography, Extreme ultraviolet

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Proceedings Article | 1 April 2009 Paper

Paper

Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process

Shinji Tarutani, Tsubaki Hideaki, Sou Kamimura

Proceedings Volume 7273, 72730C (2009) https://doi.org/10.1117/12.814093

KEYWORDS: Line width roughness, Photoresist processing, Image processing, Double patterning technology, Photomasks, Semiconducting wafers, Particles, Polymers, Lithography, Materials processing

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Proceedings Article | 26 March 2008 Paper

Paper

Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process

Shinji Tarutani, Hideaki Tsubaki, Shinichi Kanna

Proceedings Volume 6923, 69230F (2008) https://doi.org/10.1117/12.771773

KEYWORDS: Polymers, Photoresist processing, Image processing, Double patterning technology, Line width roughness, Photomasks, Polymer thin films, Optical lithography, Second-harmonic generation, Etching

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Proceedings Article | 22 March 2007 Paper

Paper

A study on the material design for the reduction of LWR

Hideaki Tsubaki, Tsukasa Yamanaka, Fumiyuki Nishiyama, Koji Shitabatake

Proceedings Volume 6519, 651918 (2007) https://doi.org/10.1117/12.712157

KEYWORDS: Line width roughness, Polymers, Surface roughness, Radium, Polymer thin films, Nanoimprint lithography, Image processing, Diffusion, Lithography, Semiconducting wafers

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Showing 5 of 18 publications

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