Paper
20 April 2011 TSOM method for semiconductor metrology
Author Affiliations +
Abstract
Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ravikiran Attota, Ronald G. Dixson, John A. Kramar, James E. Potzick, András E. Vladár, Benjamin Bunday, Erik Novak, and Andrew Rudack "TSOM method for semiconductor metrology", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710T (20 April 2011); https://doi.org/10.1117/12.881620
Lens.org Logo
CITATIONS
Cited by 23 scholarly publications and 4 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Overlay metrology

Scanning electron microscopy

Optical microscopes

Metrology

3D acquisition

3D metrology

Back to Top