Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects

Andreas Erdmann; Peter Evanschitzky; Feng Shao; Tim Fühner; Gian F. Lorusso; Eric Hendrickx; Mieke Goethals; Rik Jonckheere; Tristan Bret; Thorsten Hofmann

doi:10.1117/12.896813

4 October 2011 Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects

Andreas Erdmann, Peter Evanschitzky, Feng Shao, Tim Fühner, Gian F. Lorusso, Eric Hendrickx, Mieke Goethals, Rik Jonckheere, Tristan Bret, Thorsten Hofmann

Author Affiliations +

Proceedings Volume 8171, Physical Optics; 81710M (2011) https://doi.org/10.1117/12.896813
Event: SPIE Optical Systems Design, 2011, Marseille, France

Abstract

Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.

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Andreas Erdmann, Peter Evanschitzky, Feng Shao, Tim Fühner, Gian F. Lorusso, Eric Hendrickx, Mieke Goethals, Rik Jonckheere, Tristan Bret, and Thorsten Hofmann "Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects", Proc. SPIE 8171, Physical Optics, 81710M (4 October 2011); https://doi.org/10.1117/12.896813

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