Paper
12 April 2013 Impact of process decisions and alignment strategy on overlay for the 14nm node
Author Affiliations +
Abstract
For the 14nm node and beyond there are many integration strategy decisions that need to be made. All of these can have a significant impact on both alignment and overlay capability and need to be carefully considered from this perspective. One example of this is whether a Litho Etch Litho Etch (LELE) or a Self Aligned Double Patterning (SADP) process is chosen. The latter significantly impacting alignment and overlay mark design. In this work we look at overlay performance for a Back End of Line (BEOL) SADP Dual Damascene (DD) process for the 14nm node. We discuss alignment mark design, particularly focusing on the added complexity and issues involved in using such a process, for example design of the marks in the Metal Core and Keep layers and recommend an alignment scheme for such an integration strategy.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Laidler, Koen D’havé, Philippe Leray, Jan Hermans, Juergen Boemmels, Shaunee Cheng, Huixiong Dai, Yongmei Chen, Bencherki Mebarki, and Chris Ngai "Impact of process decisions and alignment strategy on overlay for the 14nm node", Proc. SPIE 8683, Optical Microlithography XXVI, 868306 (12 April 2013); https://doi.org/10.1117/12.2011968
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KEYWORDS
Optical alignment

Back end of line

Etching

Metals

Copper

Chemical mechanical planarization

Double patterning technology

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