Paper
22 May 2014 Temperature-stable low-power ring oscillator design for ASIC applications
H. Jafarian, A. Daneshkhah, S. Shrestha, M. Agarwal, M. E. Rizkalla, K. Varahramyan
Author Affiliations +
Abstract
A temperature-stable, low-power ring oscillator design with a wide tuning frequency range, for implementation in an ASIC is presented. The design uses a new arrangement of chain delay elements consisting of a current-starved inverter and a CMOS capacitor. The delay is controlled by changing the current through the delay elements. The simulation results show that the frequency of the presented oscillator is stable against ambient temperature variations, with less than 0.5% deviation in frequency when the temperature was changed from 0 to 50°C. The oscillation frequency is highly sensitive to the control voltage (sensitivity ~10 mV) with a tuning range of 203 MHz for 0.9 V increase in the input voltage, and simulated power consumption of 1.2 nW. The design and simulation results of the ring oscillator with 180 nm technology are presented and discussed. The presented design is applicable in advanced sensing systems, including biomedical, chemical, and other sensors.
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H. Jafarian, A. Daneshkhah, S. Shrestha, M. Agarwal, M. E. Rizkalla, and K. Varahramyan "Temperature-stable low-power ring oscillator design for ASIC applications", Proc. SPIE 9106, Advanced Environmental, Chemical, and Biological Sensing Technologies XI, 91060I (22 May 2014); https://doi.org/10.1117/12.2050642
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KEYWORDS
Oscillators

Sensors

Transistors

Biomedical optics

Chemical elements

Visualization

Field effect transistors

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