This work reports the optoelectronic characteristics of the graphene/MAPbI3/TiO2/Si heterostructure and graphene/Pb2/porous Si heterostructure for light-emitting devices with low cost. The XRD diagrams of these two heterostructures show three main peaks at the position of 14.1°, 28.4°, and 31.9°, which correlate with (110), (220), and (310) planes of the MAPbI3 perovskite phase. The PL spectra of these two heterostructures demonstrated three peaks located at 382, 566, and 766 nm. They are corresponding to the emission of B-B transition of TiO2, defects in the TiO2, and B-B transition of MAPbI3. One peak of the EL spectrum of the graphene/MAPbI3/TiO2/porous Si heterostructure operated under the injection current of 10 mA located at around 800 nm was observed.
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