Controlling semiconductor laser dynamics by cavity geometry

Hui Cao

doi:10.1117/12.2627149

25 May 2022 Controlling semiconductor laser dynamics by cavity geometry

Hui Cao

Proceedings Volume PC12141, Semiconductor Lasers and Laser Dynamics X; PC121410M (2022) https://doi.org/10.1117/12.2627149
Event: SPIE Photonics Europe, 2022, Strasbourg, France

Abstract

Nonlinear light-matter interactions may induce chaotic lasing dynamics in high-power broad-area semiconductor lasers. To control the nonlinear interactions between the lasing modes and the gain material, we manipulate the spatial structure of cavity resonances and vary their characteristic length scales. Experimentally we fabricate quasi-one-dimensional and two-dimensional microcavities of varying shapes and demonstrate diverse dynamical behaviors of the GaAs quantum well lasers.

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Citation Download Citation

Hui Cao "Controlling semiconductor laser dynamics by cavity geometry", Proc. SPIE PC12141, Semiconductor Lasers and Laser Dynamics X, PC121410M (25 May 2022); https://doi.org/10.1117/12.2627149

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KEYWORDS

Semiconductor lasers

Nonlinear control

Beam controllers

Gallium arsenide

High power lasers

Light-matter interactions

Optical microcavities

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