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9 November 2019 Stability studies on a sensitive EUV photoresist based on zinc metal oxoclusters
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Abstract

Background: Hybrid inorganic-organic materials have emerged as promising candidates for EUV resists. However, knowledge on their stability when deposited as thin films is essential for their performance in EUV lithography.

Aim: We investigate whether the molecular structure of Zn-based metal oxoclusters is preserved upon thin film deposition and study aging processes of the thin film under different atmospheres, since these chemical changes affect the solubility properties of the material.

Approach: A hybrid cluster that combines the high EUV photon absorption cross-sections of zinc and fluorine with the reactivity of methacrylate organic ligands was synthesized. The structural modifications upon thin film formation and after aging in air, nitrogen, and vacuum were studied using a combination of spectroscopic techniques. Preliminary studies on the lithographic performance of this material were performed by EUV interference lithography.

Results: The Zn-based compound undergoes structural rearrangements upon thin film deposition as compared to the bulk material. The thin films degrade in air over 24 h, yet they are found to be stable for the duration and conditions of the lithography process and show high sensitivity.

Conclusions: The easy dissociation of the ligands might facilitate hydrolysis and rearrangements after spin-coating, which could affect the reproducibility of EUV lithography.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Neha Thakur, Li-Ting Tseng, Michaela Vockenhuber , Yasin Ekinci, and Sonia Castellanos "Stability studies on a sensitive EUV photoresist based on zinc metal oxoclusters," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(4), 043504 (9 November 2019). https://doi.org/10.1117/1.JMM.18.4.043504
Received: 30 July 2019; Accepted: 18 October 2019; Published: 9 November 2019
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CITATIONS
Cited by 19 scholarly publications and 1 patent.
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KEYWORDS
Thin films

Zinc

Extreme ultraviolet lithography

Photoresist materials

Lithography

Metals

FT-IR spectroscopy

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