Extreme Ultraviolet Lithography (EUVL) is the leading candidate for next generation lithography. EUVL has good
resolution because of the shorter wavelength (13.5nm). EUVL also requires a new and complicating mask structure. The
blank complexity and substrate polishing requirements result in defects that are difficult to eliminate or repair. Due to
these challenges, shifting the pattern so that absorber covers the multilayer defects is one option for mitigating the
multilayer defect problem. We investigated the capability and effectiveness of pattern shifting using authentic layouts.
The rough indication of, “how many of what size defects are allowable”, is shown in this paper based on the margin for
the 11nm HP pattern. Only the twenty 300nm-sized defects are allowable for current location accuracy of the blank
inspection and writing tools. On the other hand, sixty70nm-sized defects are allowable for the improved location
inaccuracy. Furthermore we exercised the full process for pattern shift using a leading-edge 50 keV e-beam writer to
confirm feasibility and it was successfully performed.
It is anticipated that throughout the process development phase for the introduction of EUV lithography, defect free
substrates won’t be available – even at the manufacturing stage, non-repairable defects may still be present. We
investigate EDA-based approaches for defect avoidance, such as reticle floor planning, shifting the entire reticle field
(pattern shift), pattern shift in addition to layout classification (smart shift), and defect repair in the data prior to mask
write. This investigation is followed by an assessment of the complexity and impact on the mask manufacturing process
of the various approaches. We then explore the results of experiments run using a software solution developed on the
Calibre platform for EUV defect avoidance on various mask blanks, analyzing its effectiveness and performance.
The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity and
subsequently longer mask writing times. In particular inverse lithography methods create complex mask shapes. We
introduce a variety of techniques to mitigate the impact - data simplification post-optical proximity correction (OPC), L-Shots,
multi-resolution writing (MRW) and optimization based fracture. Their potential for shot count reduction is
assessed. All of these techniques require changes to the mask making work flow at some level - the data preparation and
verification flow, the mask writing equipment, the mask inspection and the mask qualification in the wafer
manufacturing line. The paper will discuss these factors and conduct a benefit - effort assessment for the deployment.
Some of the techniques do not reproduce the originally targeted mask shape. The impact of the deviations will be studied
at wafer level with simulations of the exposure process and quantified as to their impact on the exposure process
window. Based on the results of the assessment a deployment strategy will be discussed.
The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity and
subsequently longer mask writing times. We review the data preparation steps post tapeout, how they influence shot
count as the main driver for mask writing time and techniques to reduce that impact. The paper discusses the application
of resolution enhancements and layout simplification techniques; the fracture step and optimization methods; mask
writing and novel ideas for shot count reduction.
The paper will describe and compare the following techniques: optimized fracture, pre-fracture jog alignment,
generalization of shot definition (L-shot), multi-resolution writing, optimized-based fracture, and optimized OPC output.
The comparison of shot count reduction techniques will consider the impact of changes to the current state of the art
using the following criteria: computational effort, CD control on the mask, mask rule compliance for manufacturing and
inspection, and the software and hardware changes required to achieve the mask write time reduction. The paper will
introduce the concepts and present some data preparation results based on process correction and fracturing tools.
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