Mr. Benjamin Pinkie Profile

Benjamin Pinkie

at Boston Univ

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Author

Publications (5)

Proceedings Article | 5 October 2015 Presentation

Full-band structure modeling of the radiative and non-radiative properties of semiconductor materials and devices (Presentation Recording)

Enrico Bellotti, Hanqing Wen, Benjamin Pinkie, Masahiko Matsubara, Francesco Bertazzi

Proceedings Volume 9555, 95550H (2015) https://doi.org/10.1117/12.2190357

KEYWORDS: Instrument modeling, Semiconductor materials, Sensors, Mercury cadmium telluride, Semiconductors, Physics, Systems modeling, Silicon, Germanium, Compound semiconductors

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Proceedings Article | 24 June 2014 Paper

New model for the ideal nBn infrared detector

Marion Reine, Benjamin Pinkie, Jonathan Schuster, Enrico Bellotti

Proceedings Volume 9070, 907013 (2014) https://doi.org/10.1117/12.2054525

KEYWORDS: Sensors, Resistance, Indium arsenide, Photodiodes, Numerical simulations, Diffusion, Infrared detectors, Thermal modeling, Infrared sensors, Physics

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Proceedings Article | 19 September 2013 Paper

Multiscale modeling of photon detectors from the infrared to the ultraviolet

Enrico Bellotti, Jonathan Schuster, Benjamin Pinkie, Francesco Bertazzi

Proceedings Volume 8868, 88680R (2013) https://doi.org/10.1117/12.2028181

KEYWORDS: Instrument modeling, Systems modeling, Thermal modeling, Ultraviolet radiation, Sensors, Phonons, Infrared detectors, Monte Carlo methods, Physics, Performance modeling

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Proceedings Article | 18 June 2013 Paper

Large-scale numerical simulation of reduced-pitch HgCdTe infrared detector arrays

Benjamin Pinkie, Enrico Bellotti

Proceedings Volume 8704, 87042S (2013) https://doi.org/10.1117/12.2016186

KEYWORDS: Sensors, Quantum efficiency, Modulation transfer functions, Infrared detectors, Mercury cadmium telluride, Detector arrays, Numerical simulations, 3D modeling, Instrument modeling, Finite-difference time-domain method

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Proceedings Article | 18 June 2013 Paper

Numerical simulation of InAs nBn infrared detectors with n-type barrier layers

Marion Reine, Benjamin Pinkie, Jonathan Schuster, Enrico Bellotti

Proceedings Volume 8704, 87041Y (2013) https://doi.org/10.1117/12.2016150

KEYWORDS: Sensors, Numerical simulations, Indium arsenide, Diffusion, Neodymium, Resistance, Infrared detectors, Photodiodes, Back illuminated sensors, Diodes

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