Dr. Jonathan Schuster Profile

Dr. Jonathan Schuster

Electronics Engineer at DEVCOM Army Research Lab

SPIE Involvement:

Author

Area of Expertise:

infrared detectors , physics of semiconductor devices , ultraviolet avalanche photodiodes

Profile Summary

Jonathan Schuster received a B.S. degree in physics and a minor in Computer Science from the University at Buffalo (UB) in 2010, a M.S. degree in Electrical Engineering from Boston University (BU) in 2013 and a Ph.D. degree in Electrical Engineering from Boston University in 2014. He joined the U.S. Army DEVCOM Army Research Laboratory (ARL) as a Postdoctoral Research Fellow (Post-Doc ) in 2014 and then as an Electronics Engineer in 2016. He has also held a position as a Visiting Researcher at Boston University since 2015. While an ARL Post-Doc, he represented Post-Docs to the ARL Office of the Director as the Adelphi Laboratory Center (ALC) Co-Chair of the ARL Post-Doc Association (PDA) from 2015 to 2016. In 2016 he began serving as the Deputy Lead & Steering Committee Member of ARL's Center for Semiconductor Modeling (CSM) of Materials and Devices, rising to CSM Lead in 2021. Concurrently, in 2018 he began managing ARL's Modeling Research Environment (MRE) and since 2020 he has been leading ARL's UV SPAD Development. His current research activities pertain to modeling of optoelectronic devices, including infrared (IR) photovoltaic pixel arrays and ultraviolet (UV) avalanche photodiodes (APDs). Former activities include developing new hybridization techniques to hybridize pixel arrays to readout integrated circuits (ROICs) and modeling fiber optic systems.

Publications (17)

Proceedings Article | 15 June 2023 Presentation + Paper

Presentation + Paper

Studies of spatial uniformity and jitter in SiC UV SPADs

Anand Sampath, Gregory Garrett, Jonathan Schuster, Jeremy Smith, Michael Derenge, Daniel Habersat, Brenda VanMil, Reza Gandhi, Sergei Dolinsky, Edwin Heilweil, Joshua Bienfang, Enrico Bellotti, Michael Wraback

Proceedings Volume 12512, 1251206 (2023) https://doi.org/10.1117/12.2663387

KEYWORDS: Silicon carbide, Single photon avalanche diodes, Avalanche photodetectors, Temporal resolution, Ultraviolet radiation

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Proceedings Article | 10 March 2023 Presentation + Paper

Presentation + Paper

Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes

Jonathan Schuster, Anand Sampath, Jeremy Smith, Stephen Kelley, Gregory Garrett, Daniel Habersat, Michael Derenge, Michael Wraback, Dina Bower, Shahid Aslam, Tilak Hewagama

Proceedings Volume 12415, 1241509 (2023) https://doi.org/10.1117/12.2649236

KEYWORDS: Silicon carbide, Avalanche photodetectors, Doping, Absorption, Deep ultraviolet, Ultraviolet radiation, Avalanche photodiodes, Finite-difference time-domain method, Design and modelling, Ionization

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Proceedings Article | 31 January 2020 Presentation + Paper

Presentation + Paper

Performance and limitations of NIR and extended wavelength eSWIR InP/InGaAs image sensors

Roger DeWames, Jonathan Schuster

Proceedings Volume 11288, 112880H (2020) https://doi.org/10.1117/12.2547616

KEYWORDS: Gallium, Diffusion, Diodes, Interfaces, Photodiodes, Quantum efficiency, Arsenic, Temperature metrology, Staring arrays, Absorption

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Proceedings Article | 7 May 2019 Presentation + Paper

Presentation + Paper

Recombination processes in InAs/InAsSb type II strained layer superlattice MWIR nBn detectors

R. DeWames, J. Schuster, E. DeCuir, N. Dhar

Proceedings Volume 11002, 110020W (2019) https://doi.org/10.1117/12.2521907

KEYWORDS: Sensors, Quantum efficiency, Mid-IR, Heterojunctions, Temperature metrology, Absorption, Superlattices, Diodes, Diffusion, Solids

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There is great interest in MWIR Ga-free type II strained layer superlattice (T2SLS) nBn detectors for background limited photodetectors (BLIP) operating at temperatures higher than InSb (T ≥ 150K compared to T≈ 80-90K). Recently, Ting et al. [Proc. SPIE, Vol. 10624, 1062410-1 (2018)] reported on measurements of the dark current and quantum efficiency (QE) for e-SWIR (λ>1.7 μm), MWIR, and LWIR Ga-free nBn T2SLS detectors. Of particular interest is the reported MWIR nBn T2SLS data, since the measured dark current and QE provide the opportunity to analyze the measured detector optoelectronic characteristics using optical properties obtained separately from the hole minority carrier lifetime and optical absorption coefficient data, hence no adjustable parameters. The goal is to develop and utilize robust modeling techniques to explain real, measured nBn detector data to understand the technology limitations and the improvements needed to optimize performance and device designs. A notable result is the observation that the dark current data under reverse bias (-100 mV < bias ≤ 0 mV) obeys the ideal diode equation, where the saturation dark current is in agreement with the radiative recombination rate obtained from the measured absorption coefficient and a 9 μs Shockley-Read-Hall (SRH) lifetime obtained from the measured hole lifetime data. Most important is that the expected generation-recombination (G-R) space charge current based on the 9 μs SRH lifetime is not observed as expected for an ideal nBn heterojunction detector and that increasing excess dark currents are observed with decreasing temperature. The in-band external QE measured at 100K is in the range of 30% and is observed to increase with increasing operating temperature which indicates effects influenced by hole mobility anomalies. In contrast to the above listed observations, the Type II Ga-free nBn detector data reported by D. Ting et al. [Appl. Phys. Lett., 113, 021101, 2018] exhibits a hole energy barrier, G-R dark current like characteristics, and both temperature/voltage dependent QE.

Proceedings Article | 9 May 2018 Presentation + Paper

Presentation + Paper

Shockley-Read-Hall (SRH) recombination dark current in planar diffused P+n heterostructure InP/In0.53Ga0.47As/InP high density small pitch Focal Plane Arrays (FPAs)

R. DeWames, E. DeCuir, J. Schuster, N. Dhar

Proceedings Volume 10624, 1062405 (2018) https://doi.org/10.1117/12.2315838

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Proceedings Article | 23 February 2018 Paper

Paper

Numerical simulation of the modulation transfer function (MTF) in infrared focal plane arrays: simulation methodology and MTF optimization

J. Schuster

Proceedings Volume 10526, 105261I (2018) https://doi.org/10.1117/12.2295018

KEYWORDS: Modulation transfer functions, Sensors, Computer simulations, Diffusion, 3D modeling, Finite-difference time-domain method, Gaussian beams, Infrared imaging, Imaging systems, Numerical simulations

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Proceedings Article | 26 January 2018 Open Access

Open Access

Paper

Understanding fundamental limitations of materials to enable advanced design

Meredith Reed, Jagmohan Bajaj, Francesco Bertazzi, Enrico Bellotti, Jonathan Schuster, Philip Perconti

Proceedings Volume 10540, 1054005 (2018) https://doi.org/10.1117/12.2300711

KEYWORDS: Instrument modeling, Superlattices, Semiconductors, Mercury cadmium telluride, Semiconductor materials, Long wavelength infrared, Scattering, Staring arrays, Light scattering, Measurement devices

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Proceedings Article | 30 January 2017 Open Access

Open Access

Paper

Accelerating technology innovations by early understanding of fundamental and technology limitations of material synthesis and device operation

Jagmohan Bajaj, Roger DeWames, Jonathan Schuster, Meredith Reed, Philip Perconti, Enrico Bellotti

Proceedings Volume 10111, 1011117 (2017) https://doi.org/10.1117/12.2261308

KEYWORDS: Laser sintering, Semiconductors, Instrument modeling, Infrared sensors, Long wavelength infrared, Sensors, Stereolithography, Mercury cadmium telluride, Semiconductor materials, Infrared technology

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Timely technology transition with minimal risk requires an understanding of fundamental and technology limitations of material synthesis, device operation and design controllable parameters. However, this knowledge-based approach requires substantial investment of resources in the Science and Technology (ST) stage of development. For low volume niche semiconductor technologies of Department of Defense (DoD) relevance, there is little drive for industry to expend their limited resources towards basic research simply because there is no significant return on investment. As a result, technology transition from ST to product development is often delayed, expensive and carries risks. The Army Research Laboratory (ARL) is addressing this problem by establishing a Center for Semiconductor Modeling of Materials and Devices (CSM) that brings together government, academia, and industry in a collaborative fashion to address research opportunities through its Open Campus initiative. This Center leverages combined core competencies of partner organizations, which include a broad knowledge base in modeling, and its validation; sharing of computational, characterization, materials growth and device processing resources; project continuity; and ‘extension of the bench’ via exchange of researchers between affiliated entities. A critical DoD technology is sensing in the infrared (IR) spectrum, where understanding of materials, devices and methods for sensing and processing IR information must continually improve to maintain superiority in combat. In this paper we focus on the historical evolution of IR technology and emphasize the need for understanding of material properties and device operation to accelerate innovation and shorten the cycle time, thereby ensuring timely transition of technology to product development and manufacturing. There are currently two competing IR technologies being pursued, namely the incumbent II-VI Hg₁- _xCd_xTe technology and the III-V Type 2 Superlattices (SLs) technology. A goal of the CSM is to develop physics based models for Type 2 SLs with the capability to timely understand the knowledge gap between what is built and what is designed.

Proceedings Article | 26 September 2016 Paper

Paper

Center for Semiconductor Materials and Device Modeling: expanding collaborative research opportunities between government, academia, and industry

Philip Perconti, Sarah Bedair, Jagmohan Bajaj, Jonathan Schuster, Meredith Reed

Proceedings Volume 9933, 993308 (2016) https://doi.org/10.1117/12.2240312

KEYWORDS: Instrument modeling, Semiconductor materials, Semiconductors, Sensors, Modulation transfer functions, 3D modeling, Laser sintering, Diffusion, Infrared sensors, Computer simulations

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Proceedings Article | 17 June 2016 Paper

Paper

Analysis of the auger recombination rate in P+N−n−N−N HgCdTe detectors for hOT applications

J. Schuster, W. Tennant, E. Bellotti, P. Wijewarnasuriya

Proceedings Volume 9819, 98191F (2016) https://doi.org/10.1117/12.2224383

KEYWORDS: Mercury cadmium telluride, Sensors, Heterojunctions, Long wavelength infrared, Doping, Electrons, Cadmium, Instrument modeling, Infrared detectors, Diffusion

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Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (T_op) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in T_op are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P⁺n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or “AL”). A variant of this architecture, the P⁺N−n−N−N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P⁺N−n−N−N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term “recombination rate” for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P⁺N−n−N−N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be utilized to predict and understand the device operation, as analytical models do not exist for heterojunction devices.

Proceedings Article | 13 February 2016 Open Access

Open Access

Paper

Sensors, nano-electronics and photonics for the Army of 2030 and beyond

Philip Perconti, W. C. Alberts, Jagmohan Bajaj, Jonathan Schuster, Meredith Reed

Proceedings Volume 9755, 975506 (2016) https://doi.org/10.1117/12.2217797

KEYWORDS: Sensors, Nanoelectronics, Photonics, Infrared sensors, Imaging spectroscopy, Infrared photography, Infrared radiation, Electronics, Situational awareness sensors, Instrument modeling, Semiconductor materials, 3D modeling, Semiconductors, Performance modeling, Quantum efficiency

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Proceedings Article | 28 August 2015 Paper

Paper

Heterojunction depth in P+-on-n eSWIR HgCdTe infrared detectors: generation-recombination suppression

J. Schuster, R. DeWames, E. DeCuir, E. Bellotti, N. Dhar, P. Wijewarnasuriya

Proceedings Volume 9609, 960904 (2015) https://doi.org/10.1117/12.2186043

KEYWORDS: Cadmium, Heterojunctions, Diffusion, Quantum efficiency, Mercury cadmium telluride, Arsenic, Sensors, Doping, Neodymium, Instrument modeling

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Proceedings Article | 24 June 2014 Paper

Paper

New model for the ideal nBn infrared detector

Marion Reine, Benjamin Pinkie, Jonathan Schuster, Enrico Bellotti

Proceedings Volume 9070, 907013 (2014) https://doi.org/10.1117/12.2054525

KEYWORDS: Sensors, Resistance, Indium arsenide, Photodiodes, Numerical simulations, Diffusion, Infrared detectors, Thermal modeling, Infrared sensors, Physics

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Proceedings Article | 19 September 2013 Paper

Paper

Multiscale modeling of photon detectors from the infrared to the ultraviolet

Enrico Bellotti, Jonathan Schuster, Benjamin Pinkie, Francesco Bertazzi

Proceedings Volume 8868, 88680R (2013) https://doi.org/10.1117/12.2028181

KEYWORDS: Instrument modeling, Systems modeling, Thermal modeling, Ultraviolet radiation, Sensors, Phonons, Infrared detectors, Monte Carlo methods, Physics, Performance modeling

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Proceedings Article | 18 June 2013 Paper

Paper

Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

Jonathan Schuster, Enrico Bellotti

Proceedings Volume 8704, 87042Q (2013) https://doi.org/10.1117/12.2016496

KEYWORDS: Quantum efficiency, Mercury cadmium telluride, Numerical simulations, 3D modeling, Sensors, Finite-difference time-domain method, Oxides, Reflection, Antireflective coatings, Computer simulations

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Proceedings Article | 18 June 2013 Paper

Paper

Numerical simulation of InAs nBn infrared detectors with n-type barrier layers

Marion Reine, Benjamin Pinkie, Jonathan Schuster, Enrico Bellotti

Proceedings Volume 8704, 87041Y (2013) https://doi.org/10.1117/12.2016150

KEYWORDS: Sensors, Numerical simulations, Indium arsenide, Diffusion, Neodymium, Resistance, Infrared detectors, Photodiodes, Back illuminated sensors, Diodes

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Proceedings Article | 31 May 2012 Paper

Paper

Numerical simulation of InAs/AlAsSb nBn detector arrays

Jonathan Schuster, Benjamin Pinkie, Marion Reine, Enrico Bellotti

Proceedings Volume 8353, 835330 (2012) https://doi.org/10.1117/12.919401

KEYWORDS: Diffusion, Quantum efficiency, Indium arsenide, Sensors, 3D modeling, Back illuminated sensors, Electrons, Numerical simulations, Detector arrays, Doping

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Showing 5 of 17 publications

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