Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended
for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect
conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated
vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily
integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel
and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.
An indirect digital x-ray detector is designed, fabricated, and tested. The detector integrates a high speed, low noise
CMOS substrate with two types of amorphous semiconductors on the circuit surface. Using a laterally oriented layout
a-Si:H or a-Se can be used to coat the CMOS circuit and provide high speed photoresponse to complement the high speed
circuits possible on CMOS technology. The circuit also aims to reduce the effect of slow carriers by integrated a Frisch
style grid on the photoconductive layer to screen for the slow carriers. Simulations show a uniform photoresponse for
photons absorbed on the top layer and an enhanced response when using a Frisch grid. EQE and noise results are
presented. Finally, possible applications and improvements to the area of indirect x-ray imaging that are capable of easily
being implemented on the substrate are suggested.
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