Electron optics can assist in the fabrication of semiconductor devices in many challenges that arise from the ongoing decrease of structure size. Examples are augmenting optical lithography by electron beam direct write strategies and high-throughput imaging of patterned structures with multiple beam electron microscopes. We use multiple beam electron microscopy to image semiconductor wafers processed by electron beam lithography.
The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow’s requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection.
To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today’s patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.
SEMATECH aims to identify and enable disruptive technologies to meet the ever-increasing demands of semiconductor high volume manufacturing (HVM). As such, a program was initiated in 2012 focused on high-speed e-beam defect inspection as a complement, and eventual successor, to bright field optical patterned defect inspection [1]. The primary goal is to enable a new technology to overcome the key gaps that are limiting modern day inspection in the fab; primarily, throughput and sensitivity to detect ultra-small critical defects. The program specifically targets revolutionary solutions based on massively parallel e-beam technologies, as opposed to incremental improvements to existing e-beam and optical inspection platforms. Wafer inspection is the primary target, but attention is also being paid to next generation mask inspection. During the first phase of the multi-year program multiple technologies were reviewed, a down-selection was made to the top candidates, and evaluations began on proof of concept systems. A champion technology has been selected and as of late 2014 the program has begun to move into the core technology maturation phase in order to enable eventual commercialization of an HVM system. Performance data from early proof of concept systems will be shown along with roadmaps to achieving HVM performance. SEMATECH’s vision for moving from early-stage development to commercialization will be shown, including plans for development with industry leading technology providers.
KEYWORDS: Scanning electron microscopy, Sensors, Electron beams, Signal to noise ratio, Image resolution, Semiconductors, Beam splitters, Brain, Image processing, Microscopy
Multiple electron beam SEMs enable detecting structures of few nanometer in diameter at much higher throughputs than possible with single beam electron microscopes at comparable electron probe parameters. Although recent multiple beam SEM development has already demonstrated a large speed increase1, higher throughputs are still required to match the needs of many semiconductor applications2. We demonstrate the next step in the development of multi-beam SEMs by increasing the number of beams and the current per beam. The modularity of the multi-beam concept ensures that design changes in the multi-beam SEM are minimized.
Laser cutting of human bone and tissue is one of the oldest and most widespread applications of biophotonics. Due to the unique absorption of different kinds of tissue, choosing an appropriate laser wavelength allows selective ablation of tissue. Consequently, a large variety of laser sources with different emission wavelengths have been successfully applied to an equally large variety of medical indications. However, only a limited set of successful tissue-interaction experiments have translated into standard minimally-invasive procedures. One of the main reasons for this discrepancy between medical research and clinical practice is the lack of a commercially viable, flexible, and easy-to-use fiber optic beam delivery systems for wavelengths longer than 2 μm. In this paper, we will show how OmniGuide fibers, a new type of photonic bandgap fibers, could solve this problem. Recent performance data will be presented for both straight and bent fibers, including losses and power capacity, for delivery of CO2 lasers. We will also highlight medical procedures where these fibers could find first applications.
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