EUV lithography continues to make scaling cost effective for chip manufacturers and allows Moore`s law to pursue. High NA EUV with its increased numerical aperture (NA) from 0.33NA to 0.55NA enables 1.7x smaller features and improved local CDU. This brings several benefits for advance chipmakers such as patterning cost reduction due to multi-patterning, reduced defect density as a result of process simplification and shorter cycle time via mask reduction. Currently, there are multiple high NA EUV systems (EXE:5000) which completed the built and qualification in the ASML factory. The first performance data is being collected via one of these high NA EUV systems. This paper will cover the performance results of the high NA EUV platform (EXE:5000) on imaging and overlay based on the initial findings from common learning collaboration. Furthermore, the progresses towards future high NA EUV systems will be described.
Extreme ultraviolet (EUV) lithography was recently implemented in high-volume wafer production. Consequently, maximizing yield is gaining importance. One key component to achieving optimal yield is using a pellicle to hold particles out of the focal plane and thereby minimizing the printing of defects. The carbon nanotube (CNT) pellicle is a membrane consisting of a network of CNTs with a demonstrated EUV transmission (EUV-T) of up to 98%. The challenge is balancing the CNT material parameters for optimal performance in the EUV scanner: low probability for particles to pass, low impact on imaging through scattered light, and high durability in the scanner environment, while maintaining high transmission. We report results of the first full-field CNT pellicle exposures on an EUV scanner. We demonstrate handling of the pellicles, without breakage, and provide a first assessment of their imaging behavior. Multiple single- and double-walled uncoated CNT pellicles with EUV-T of up to 97.7% were exposed on the EUV scanner at imec, and minimal impact on the imaging was confirmed. In these exposures, uncoated CNT pellicles that do not yet meet the specifications regarding lifetime were used. Therefore, ongoing developments focus on CNT durability in scanner environments. The presented demonstration proves the value of a CNT-based EUV pellicle solution.
EUV lithography has recently been implemented in high volume wafer production. Consequently, maximizing yield is gaining importance. One key component to achieve optimal yield is using a pellicle to hold particles out of the focal plane and thereby minimize the printing of defects. The Carbon Nano Tube (CNT) pellicle is a membrane consisting of a network of carbon nanotubes, and demonstrated EUV transmission up to 98%. The challenge is to balance the CNT material parameters for optimal performance in the EUV scanner: low probability for particles to pass, low impact on imaging through scattered light, high durability in the scanner environment, while maintaining high transmission. We report results of the first full-field CNT pellicle exposures on an NXE EUV scanner. We demonstrate handling of the pellicles on the scanner, without breakage, and provides a first assessment of their imaging behavior. Multiple single- and double-walled uncoated CNT pellicles with EUV transmission up to 97.7% were exposed on the NXE scanner at imec, and minimal impact on the imaging is confirmed. In these exposures, uncoated CNT pellicles were used which will not meet the specifications regarding lifetime. Therefore, current ongoing developments focus on CNT coating and durability in scanner environment. The presented demonstration proves the value of a CNT-based EUV pellicle solution.
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