In this paper we investigated a planar field emission cell with a multiemitter cathode. Multilayer graphene on silicon carbide was used as the material of the field emission cell. The simulation of the electric field distribution in the nanoscale interelectrode gap of the field emission cell was carried out. The use of a planar multiemitter cathode on a flat base leads to inhomogeneity of the electric field strength at the tops of the tips. The electric field strength at the tops increases in the direction from the center to the edge. A design with a disk anode and a surrounding multiemitter cathode is proposed. The uniform distribution of the tips along the perimeter of the cathode contributed to the exclusion of the screening effect. The proposed design makes it possible to reduce the distance between the tips in the matrix cathode while maintaining the uniform electric field strength on the tops.
The results of investigation of a memristor nanostructures based on titanium nanowires fabricated by methods of focused ion beams are presented. The memristor effect in the titanium nanowires is investigated by an AFM in the mode of spreading resistance map. It is shown that the using of FIB milling allows to form conductive channels with different shapes and nanoscale dimensions. The analysis of the I-Vs of Ti nanowire memristor structures shows that the resistivity ratio in the high- and low-resistance states is higher than 102. After a series of measurements determined that memristor structures have a high stability of resistance. The obtained results are most promising for developing the technological processes of the formation of resistive operation memory cells.
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