We have grown InAs/GaAs quantum dots (QDs) by droplet epitaxy for
application in single photon sources. This growth method enables the formation of QDs without
strain, with emission wavelengths of around 1.3μm within the optimal detection range of cost
effective silicon detector, and with reduced surface density of several tens to a few QDs per μm2
for easier isolation of single QDs. The optical properties of QDs were envisaged by exciton and
biexciton emission peaks identified from power dependent and time-resolved
micro-photoluminescence (μ-PL) measurements.
A special kind of one-dimensional magnetic photonic crystal (MPC) with the same refractive indices of the composites is
investigated. We adopt the transmission matrix method to analyze the transmission properties of the special MPCs. The
results indicate that the stop-band edges of TE mode coincide with those of TM mode, and the stop bands for both modes
expand as the incident angle increases. Based on the incident angle domain method, the ODTR band determined by the
wave impedance ratio can be enlarged using a heterostructure. Moreover, the requirement of ODTR of each sub-PC is
unnecessary, which extends the range of materials.
An application of the genetic algorithm in designing omnidirectional optical filters is reported in this paper. Concerning
different periodic numbers and thickness ratios in the photonic crystal, we gave some optimization examples and finally
achieved a photonic heterostructure with very broad omnidirectional filter bandwidth as well as two very narrow
transmission windows. And they are found that when the normal incident beam is tilted at a negligibly small angle, the
perfect transmittance peak will vanish. Hence, this heterostructure can be regarded as an omnidirectional high-precision
two-channel filters with potential application in optical filters, optical switches, and many other optical
telecommunication areas.
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