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Joseph R. Sink
at Univ of Iowa
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Author
Publications (1)
Proceedings Article | 20 February 2017 Paper
Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy
K. Zhang, V. Ray, P. Herrera-Fierro, J. Sink, F. Toor, J. Prineas
Proceedings Volume 10114, 1011419 (2017) https://doi.org/10.1117/12.2267737
KEYWORDS: Nanowires, Indium arsenide, Silicon, Molecular beam epitaxy, Epitaxy, Heteroepitaxy, Temperature metrology, Crystals, Electron beam lithography, Scanning electron microscopy, Reactive ion etching, Mid-IR
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