We present LED profiting from the bottom-tunnel junction (BTJ) construction. The BTJ design aligns the polarization fields in a desired direction in the vicinity of active region and inverts the ordering of the layer stack in the structure. This leads the situation were conductive, n-type layer is on the very top of the structure. Since current spreading in n-type material is much better than in p-type, BTJ-based light emitters open new possibilities in heterostructure design. In this talk we present new light emitting structures grown by plasma-assisted MBE based on BTJ platform and compare prospects for bottom and top tunnel junction devices.
The physics of the bottom tunnel junction (BTJ) and its improvement over standard p-up geometry in InGaN blue LEDs is quantified through pulsed power measurements. It is found that the peak external quantum efficiency (EQE) and wall-plug efficiency (WPE) for a p-down BTJ LED is about threefold that of its counterpart, the p-up top tunnel junction (TTJ) LED. This is contributed to increased radiative recombination and reduced electron overflow. Further, the peaks occur at lower current densities for the BTJ device, suggesting earlier saturation of Shockley-Read-Hall traps. In the droop regime, where electron overflow, device heating, and 3-particle interactions are significant, the performance of the BTJ is found to be consistently better than that of the TTJ, converging at large current densities where the polarization fields are screened.
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