Varvara Brackmann, Malte Neul, Michael Friedrich, Wolfram Langheinrich, Maik Simon, Pascal Muster, Sebastian Pregl, Arne Demmler, Norbert Hanisch, Maximilian Lederer, Katrin Zimmermann, Jan Klos, Felix Reichmann, Yuji Yamamoto, Marcus Wislicenus, Claus Dahl, Lars Schreiber, Hendrik Bluhm, Benjamin Lilienthal-Uhlig
Universal quantum computers promise the possibility of solving certain computational problems significantly faster than classically possible. For relevant problems, millions of qubits are needed, which is only feasible with industrial production methods. This study presents an electron beam patterning process of gate electrodes for Si/SiGe electron spin qubits, which is compatible with modern CMOS semiconductor manufacturing. Using a pCAR e-beam resist, a process window is determined in which structure sizes of 50 nm line and 30 nm space can be reproducibly fabricated with reasonable throughput. Based on electrostatic simulations, we implemented a feedback loop to investigate the functionality of the gate electrode geometry under fabrication-induced variations.
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