We report the fabrication of a monolithic closed-loop wavelength beam combined quantum cascade laser (QCL) source. The chip comprises five QCL gain sections connected to 5 × 1 arrayed waveguide gratings (AWG) via active/passive tapered couplers and a router. The chip is fabricated on a MOCVD-grown III-V semiconductor substrate. The entire passive section of the chip undergoes ion implantation to reduce the propagation losses due to free carrier absorption. The peak power for all the QCL array elements reached 600 mW per facet with a 2 kA/cm2 threshold current density under pulsed operation. Furthermore, our WBC approach is compatible with buried heterostructure processing, which allows continuous wave operation with high output power. Our results hold promise in manufacturing compact and multiwavelength mid-infrared sources with good beam quality.
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