Mr. Ragava Lokasani Profile

Ragava Lokasani

Junior Researcher at Czech Technical Univ in Prague

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Publications (3)

Proceedings Article | 17 May 2017 Paper

XUV generation from the interaction of pico- and nanosecond laser pulses with nanostructured targets

Ellie Floyd Barte, Ragava Lokasani, Jan Proska, Lucie Stolcova, Oisin Maguire, Domagoj Kos, Paul Sheridan, Fergal O’Reilly, Emma Sokell, Tom McCormack, Gerry O’Sullivan, Padraig Dunne, Jiri Limpouch

Proceedings Volume 10243, 1024315 (2017) https://doi.org/10.1117/12.2265984

KEYWORDS: Plasmas, Laser energy, Silicon, Pulsed laser operation, Semiconductor lasers, Extreme ultraviolet, Plasma, Tin, Extreme ultraviolet lithography, Nd:YAG lasers, Nanostructures, Laser applications, Spectroscopy

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Proceedings Article | 14 May 2015 Paper

Spectra of plasmas of Ru, Rh, Pd and Mo produced with nanosecond and picosecond laser pulses

Ragava Lokasani, Elaine Long, Paul Sheridan, Patrick Hayden, Fergal O'Reilly, Padraig Dunne, Akira Endo, Jiri Limpouch, Gerry O'Sullivan

Proceedings Volume 9514, 95141B (2015) https://doi.org/10.1117/12.2176551

KEYWORDS: Molybdenum, Plasmas, Palladium, Rhodium, Ruthenium, Ions, Picosecond phenomena, Extreme ultraviolet, X-rays, Lithography

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Proceedings Article | 1 April 2013 Paper

Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV

I. Pollentier, R. Lokasani, R. Gronheid, S. Hill, C. Tarrio, T. Lucatorto

Proceedings Volume 8679, 86790K (2013) https://doi.org/10.1117/12.2011541

KEYWORDS: Semiconducting wafers, Contamination, Electrons, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist materials, Photons, Mirrors, Beam shaping, EUV optics

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EUV photoresists are considered as a potential source of optics contamination, since they introduce irradiation induced outgassing in the EUV vacuum environment. Therefore, before these resists can be used on e.g. ASML NXE:3100 or NXE:3300, they need to be tested in dedicated equipment according to a well-defined procedure, which is based on exposing a witness sample (WS) in the vicinity of a simultaneously exposed resist as it outgasses. Such an outgassing test infrastructure is available at many sites, but exposure modes on the witness sample and wafer can be significantly different, which potentially could lead to different test results. In this investigation, we first explored in more detail the relationship between resist outgassing as measured by RGA (Residual Gas Analysis) and the carbon growth obtained in the WS test. A good correlation was found by using a timeintegrated and mass-weighted sum of the RGA-measured mass peaks. Next, the impact of the resist exposure mode on the WS contamination result was investigated at imec, where the outgas test setup allows to expose the wafer with EUV irradiation as well as electrons in the same vacuum environment. It was found that minor differences observed in the WS test results, can be explained by adequate characterization of exposure intensity distribution and dose control. Finally the WS test results at imec from the different exposure modes were compared to the test results at NIST. The small differences in contamination that were observed could be explained by differences in test procedure, by using the time dependent RGA approach. From the combined work on outgassing measurements and WS contamination testing we have significantly improved our understanding of the relationship between outgassing and contamination processes induced by EUV photons and electrons. We have also demonstrated how to compare results obtained at different outgas testing sites, which is important in quantifying the potential risk to EUV device manufacturing posed by resist outgassing.

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