Micro-transfer printing of thin-film lithium niobate (TFLN), as a backend integration method, enables selective and localized placement of TFLN to silicon platform, facilitating the creation of complex, multi-material systems that combine lithium niobate with other components. In this study, we investigate the transfer printing technique for TFLN. We present experimental results from hybrid silicon-LN devices created using this method, including micro-transfer printed ring modulators, photonics crystal (PhC) modulators, and Bragg Grating modulators, among others.
New circuit architectures and technologies for high-speed electronic and photonic integrated circuits are essential to realize optical interconnects with higher symbol rate. As a consequence of the increasing speeds, close integration and co-design of photonic and electronic chips have become a necessity to realize high-performance transceivers with novel packaging approaches. Extensive co-design also enables the design of new electro-optic architectures to create and process optical signals more efficiently. This paper and presentation will illustrate a number of recent developments of application-specific high-speed electro-optic transceiver circuits including e.g. broadband driver amplifiers, transimpedance amplifiers, analog equalizers and multiplexer circuits for signal generation and reception at 100 Gbaud and beyond. The basic concepts and architectures, technological aspects, design challenges and trade-offs will be discussed.
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