Dr. Shyam Sridhar Profile

Dr. Shyam Sridhar

at Tokyo Electron

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Author

Publications (4)

Proceedings Article | 1 May 2023 Presentation + Paper

Process optimization for shallow trench isolation etch using computational models

Shuo Huang, Prem Panneerchelvam, Chad Huard, Shyam Sridhar, Peter L. Ventzek, Mark Smith

Proceedings Volume 12499, 1249905 (2023) https://doi.org/10.1117/12.2664977

KEYWORDS: Etching, Plasma, Calibration, Mathematical optimization, Inverse problems, Plasma etching, Silicon, 3D modeling, Modeling, Semiconducting wafers

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Proceedings Article | 24 March 2020 Presentation

Challenges in the patterning of RRAM devices for analog computing applications (Conference Presentation)

Iqbal Saraf, Shyam Sridhar, Christopher Catano, Sergey Voronin, Dexin Kong, Soon-Cheon Seo, Youngseok Kim, Takashi Ando, Nicole Saulnier, Vijay Narayanan

Proceedings Volume 11329, 113290N (2020) https://doi.org/10.1117/12.2552035

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Proceedings Article | 20 March 2019 Paper

Peculiarities of selective isotropic Si etch to SiGe for nanowire and GAA transistors

Christopher Catano, Nicholas Joy, Christopher Talone, Shyam Sridhar, Sergey Voronin, Peter Biolsi, Alok Ranjan

Proceedings Volume 10963, 109630E (2019) https://doi.org/10.1117/12.2514566

KEYWORDS: Silicon, Etching, Germanium, Plasmas, Interfaces, Isotropic etching, Nanowires, Transistors, 3D applications

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Proceedings Article | 20 March 2018 Paper

Selective dry etching of silicon containing anti-reflective coating

Shyam Sridhar, Andrew Nolan, Li Wang, Erdinc Karakas, Sergey Voronin, Peter Biolsi, Alok Ranjan

Proceedings Volume 10589, 1058908 (2018) https://doi.org/10.1117/12.2297418

KEYWORDS: Etching, Plasmas, Dry etching, Oxides, Oxygen, Plasma treatment

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Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO₂ using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si – O) in the two materials.

In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF₃/H₂ plasma. Surface treatment in O₂ plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF₃/H₂ dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO₂. The etching chemistry, however, was sensitive to NF₃:H₂ gas ratio. For dilute NF₃ in H₂, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF₃/H₂ plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic and Si layers) post pattern transfer, in a multi-layer structure will be discussed.

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