Process control of line width and etch depth on the photomask production is more important as the industry moves
toward 50nm node and beyond. In this paper, we report the ellipsometer-based scatterometry based metrology system
that provides line width and resist thickness measurements on sub 50 nm node test masks for a mask process monitoring.
Measurements were made with spectroscopic rotating compensator ellipsometer system. For analysis we made up
modeling libraries with a 200 nm half pitch and checked and applied them to ADI and ACI measurements of binary and
phase shift mask (PSM). We characterized the CD uniformity, linearity, thickness uniformity. Results show that linearity
measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more
than 0.99. Resist thickness results show that depth bias is about 2nm between AFM and OCD in ADI step. The data
show that optical CD measurements provide a nondestructive way to monitor mask processes with relatively little time
loss from measurement step.
Research and development efforts on EUV technology for the 32 nm node and beyond are progressing rapidly. Although a big concern is defect control on EUV mask blanks, control of linewidth and profile will be an important factor in acceptance of EUV technology. In this paper, we discuss the issues and strategies surrounding CD and profile metrology of EUV masks. EUV mask blanks from Hoya and Asahi Glass Company were used in this study, and were measured on a Nanometrics Atlas-M measurement tool, generating CD and profile results using Timbre Technologies' ODP analysis software. The Atlas-M tool has dual optics, enabling use of either normal incidence Reflectometry or oblique incidence Ellipsometry, either of which may be used for Scatterometry. The relative merits of each of these technologies are discussed. The complex EUV stack presents numerous challenges for metrology; the critical task is to accurately measure the optical constants of the numerous layers in the stack. The multilayer MoSi stack is effectively modeled as a single layer for optical constants determination. Photoresist FEP171 was used for the patterning, and the CD and profile of the resist were measured, after which the absorber layer was etched. Parameters characterized in this study include photoresist CD and height, etched Absorber CD, and capping layer over etch. Correlation to top-down CD-SEM, cross-sectional SEM, and AFM is reported. No charging or other deformation was observed on the EUV masks. The data show that ODP Scatterometry provides a non-destructive method for monitoring resist CD and profile, as well as etched structure CD and over/underetch on EUV masks.
As the design rule of lithography becomes smaller, printability of reticle defect to wafer is critical for the photomask manufacturing technology. In order to improve the controllability of reticle defects, inspection and repair systems are expanding their capability by continuously modifying hardware and software. This is a good solution to detect and review the defect but it is indirect approaching to reduce the defect in the photomask process. To produce the photomask of defect free or low defect density, effort is needed to improve the capability of defect control in the mask-making process and to evaluate the source of hard defect as well as soft defect. In this paper, we concern the defect source and the feature of printed defects in photomask manufacturing steps. We also discuss the efforts to eliminate the defect source and to control the mask-making process with low defect density. In order to eliminate the source of defects, we partition the mask-making process with defect inspection system, SLF27 TeraStar and Lasertec MD2000, and review a defect shape with CD SEM and AFM. And we compare printed defects, which exist in each process steps, after dry etching process.
As the design rule of lithography becomes smaller, printability of reticle defect to wafer is crucial for the photomask manufacturing technology. In order to improve the controllability of reticle defects, inspection and repair systems are expanding their capability by continuously modifying hardware and software. This is a good solution to detect and review the defect but it is indirect approaching to reduce the defect in the photomask process. To produce the photomask of defect free or low defect density, effort is needed to improve the capability of defect control in the mask-making process and to evaluate the source of hard defect as well as soft defect.
In this paper, we concern the defect source and the feature of printed defects in photomask manufacturing steps. We also discuss the efforts to eliminate the defect source and to control the mask-making process with low defect density. In order to eliminate the source of defects, we partition the mask-making process with defect inspection system, SLF27 TeraStar and Lasertec MD2000, and review a defect shape with CD SEM and AFM. And we compare printed defects, which exist in each process steps, after dry etching process.
As the design rule is rapidly decreased, tighter critical dimension (CD) control is highly requested. Considering the mask error enchantment factor, higher mask quality below 8nm should be guaranteed for 0.10micrometers generation devices. Among a number of actors causing CD errors in e-beam mask fabrication, dry etching plays an important role. Therefore, it is necessary to reduce loading effect for accurate CD control. As the loading effect in the dry etching is closely related to the selectivity of Cr to resist, a clue to reduce the loading effect is to reduce loading. In this paper, we will clarify the relation mechanism between the selectivity and loading effect. We will investigate the degree of loading effect by quantifying the selectivity with different etch processes.
The demands for shrinking critical dimension (CD) and for tight control of CD uniformity on photomask are rapidly increasing. To keep pace with the demands, optical pattern generators using i-line resist is expanding its capability by continuously modifying hardware and writing strategies. Aside from their advantage of high throughput and layer-to- layer alignability for phase-shifting masks (PSM), this optical process has proven to show a good capability in view of the mean-to-target (MTT) control. In this paper, we investigate the extended capability of a laser writing tool for 180nm node and below in view of process-induced limitations and systematic errors. We also discuss the effects of pattern density and of writing strategy on Cd accuracy and pattern placement error. Since MTT and CD uniformity error for 180 nm generation device are critical for wafer printing, we scrutinize process-induced limitations and systematic errors. The process-induced limitations, related to pattern density and shape, are discussed along with the football effect and iso-dense bias.
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