Prof. Tito L. Busani Profile

Prof. Tito L. Busani

Assistant Professor at Univ of New Mexico

SPIE Involvement:

Conference Program Committee | Author | Student Chapter Advisor

Proceedings Article | 10 April 2024 Presentation

Integrated atomic metrology with analog/digital lithography and spectroscopy: a future in nano a quantum fabrication

Tito Busani, Isaac Stricklin, John Randall, Ivo Rangelow

Proceedings Volume PC12956, PC129560K (2024) https://doi.org/10.1117/12.3010007

KEYWORDS: Lithography, Quantum measurement, Gallium nitride, Fabrication, Nanowires, Spectroscopy, Atomic force microscopy, Ultraviolet radiation, Silicon, Quantum systems

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Proceedings Article | 1 May 2023 Poster + Paper

Realization of high-Q Lamb wave resonator with smooth vertical etching profile for thin film lithium niobate

Arjun Aryal, Ravi Kiran Chityala, Isaac Stricklin, Sidhant Tiwari, Aleem Siddiqui, Tito Busani

Proceedings Volume 12497, 124970X (2023) https://doi.org/10.1117/12.2665860

KEYWORDS: Resonators, Etching, Thin films, Microresonators, Acoustics, Piezoelectric materials, Metals, Lithium niobate, Design and modelling, Acoustic waves

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Proceedings Article | 13 June 2022 Presentation

Multi-purpose active probes in atomic resolution lithography, near field spectroscopy and field emission lithography

Tito Busani, Ivo Rangelow, Teodor Gotszalk, Mahmoud Behazirad

Proceedings Volume PC12054, PC120540Q (2022) https://doi.org/10.1117/12.2621979

KEYWORDS: Lithography, Gallium nitride, Near field scanning optical microscopy, Scanning tunneling microscopy, Field spectroscopy, Scanning probe microscopy, Near field, Emission spectroscopy, Atomic force microscopy, Spectroscopy

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Proceedings Article | 24 March 2020 Presentation

Recent advancements of III-N materials in probe scanning lithography and metrology (Conference Presentation)

Tito Busani, Ivo Rangelow

Proceedings Volume 11324, 1132409 (2020) https://doi.org/10.1117/12.2555095

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Proceedings Article | 17 September 2018 Presentation

III-N nanowire atomic force cantilevers for ultra-vertical-wall scanning-probe, scanning-tunneling, and near-field microscopy (Conference Presentation)

Tito Busani, Steven Brueck, Daniel Feezell

Proceedings Volume 10720, 107200H (2018) https://doi.org/10.1117/12.2326712

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The steady advance of nanotechnology from investigation to application and to manufacturing is increasing the demands on nanoscale metrology and lithography. As dimensions shrink to the nano-scale, the available metrologies, necessary for any advanced manufacturing process, become limited. Optical metrology faces resolution limits associated with the large size of the photon relative to the nanostructure. Interference techniques offer sub-wavelength resolution, but at the expense of experimental and signal processing complexity. Electron and ion microscopies (SEM, TEM, FIB, etc.) offer resolution but require high vacuum and are generally unavailable for in-line manufacturing applications. Scanning probe techniques such as atomic force microscopy (AFM), scanning tunneling microscopy (STM), and near-field scanning optical microscopy (NSOM) are very attractive, yet, still unreliable to produce ideal results. For example, AFM, commercial tips are often pyramidal, resulting in significant artifacts requiring complex and uncertain deconvolution of the data. For STM and STL (scanning-tunneling lithography), amorphous/polycrystalline metal tips are the dominant commercial technology but are subject to erosion and wear. For NSOM, metal tips require a complex alignment - optical fibers offer an alternative but are difficult to combine with AFM and STM functionality. To overcome to the above-mentioned problems, we have developed a single nanowire probe systems, based on single crystal III-N semiconductors. Uniform GaN nanowire arrays, formed thought a combination of wet and dry etch of MOCVD GaN films, were achieved over a large area (>105 μm2) with an aspect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (<1 nm), allowing metrology of vertical structures with no artifact correction. Doping, during MOCVD film growth, controlled the conductivity of the GaN. Studies of the etching mechanism for different doping level are also reported. Optical emission properties of the 65 nm radius and 2 micron length GaN, mounted on an AFM tip shows a lasing at 365 nm with a line width of 0.15 nm and a Q-factor of 1139-2443. Our results show that fabrication of high-quality GaN nanowire arrays with adaptable aspect ratio and large-area uniformity is feasible through a top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate. Indeed we will also present the state of the art results of these nanowires in AFM and STM metrology as well in field emission and scanning tunneling lithography and NSOM and demonstrate as, such a single wide-bandgap tip technology offers the functionality and versatility of several incumbent technologies in one single, universal, system.

Proceedings Article | 3 November 2016 Presentation

GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)

Mahmoud Behzadirad, Noel Dawson, Mohsen Nami, Ashwin Rishinaramangalam, Daniel Feezell, Tito Busani

Proceedings Volume 9927, 99270N (2016) https://doi.org/10.1117/12.2237892

KEYWORDS: Gallium nitride, Silicon, Metrology, Metalorganic chemical vapor deposition, Nanoparticles, Atomic force microscopy, Silicon carbide, Gold, Carbon, Nanowires

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Proceedings Article | 5 October 2015 Presentation

Monolithically self-assembled organic active materials integrated with thermoelectric for large spectrum solar harvesting system (Presentation Recording)

Tito Busani, Olga Lavrova, Matthew Erdman, Julio Martinez, Noel Dawson

Proceedings Volume 9562, 95620H (2015) https://doi.org/10.1117/12.2188897

KEYWORDS: Nanowires, Thermoelectric materials, Zinc oxide, Solar energy, Metals, Solids, Photovoltaics, Nanolithography, Crystals, Transmittance

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Proceedings Article | 4 June 2015 Paper

Confocal Raman spectroscopy and AFM for evaluation of sidewalls in type II superlattice FPAs

T. Rotter, T. Busani, P. Rathi, F. Jaeckel, P. Reyes, K. Malloy, A. Ukhanov, E. Plis, S. Krishna, M. Jaime-Vasquez, N. Baril, J. Benson, D. Tenne

Proceedings Volume 9451, 94510R (2015) https://doi.org/10.1117/12.2178162

KEYWORDS: Raman spectroscopy, Staring arrays, Atomic force microscopy, Sensors, Confocal microscopy, Phonons, Gallium antimonide, Indium arsenide, Superlattices, Astatine

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Proceedings Article | 16 March 2015 Paper

GaSb thermophotovoltaics: current challenges and solutions

N. Rahimi, D. Herrera, A. Aragon, D. Shima, O. Romero, T. Rotter, T. Busani, O. Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 9358, 935816 (2015) https://doi.org/10.1117/12.2079635

KEYWORDS: Gallium antimonide, Diodes, Crystals, Indium gallium arsenide antimonide, Annealing, Ion implantation, Beryllium, Scanning electron microscopy, Resistance, Gallium

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Proceedings Article | 7 March 2014 Paper

Beryllium implant activation and damage recovery study in n-type GaSb

N. Rahimi, M. Behzadirad, Emma Renteria, D. Shima, Ayse Muniz, T. Busani, Olga Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 8981, 89811Q (2014) https://doi.org/10.1117/12.2040276

KEYWORDS: Gallium antimonide, Annealing, Beryllium, Crystals, Diodes, Semiconducting wafers, Doping, Antimony, Ions, Atomic force microscopy

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Proceedings Article | 7 March 2014 Paper

Bio-hybrid integrated system for wide-spectrum solar energy harvesting

Kathleen Martin, Matthew Erdman, Hope Quintana, John Shelnutt, John Nogan, B. Swartzentruber, Julio Martinez, Olga Lavrova, Tito Busani

Proceedings Volume 8983, 89831D (2014) https://doi.org/10.1117/12.2040747

KEYWORDS: Zinc oxide, Solar energy, Thermoelectric materials, Photovoltaics, Solids, Solar cells, Sun, System integration, Zinc, Nanowires

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Proceedings Article | 22 June 2011 Paper

Away from silicon era: the paper electronics

R. Martins, B. Brás, I. Ferreira, L. Pereira, P. Barquinha, N. Correia, R. Costa, T. Busani, A. Gonçalves, A. Pimentel, E. Fortunato

Proceedings Volume 7940, 79400P (2011) https://doi.org/10.1117/12.879520

KEYWORDS: Transistors, Electronics, Thin films, Electrodes, Capacitance, Oxides, Humidity, Scanning electron microscopy, Electronic components, Prototyping

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Today there is a strong interest in the scientific and industrial community concerning the use of biopolymers for electronic applications, mainly driven by low-cost and disposable applications. Adding to this interest, we must recognize the importance of the wireless auto sustained and low energy consumption electronics dream. This dream can be fulfilled by cellulose paper, the lightest and the cheapest known substrate material, as well as the Earth's major biopolymer and of tremendous global economic importance. The recent developments of oxide thin film transistors and in particular the production of paper transistors at room temperature had contributed, as a first step, for the development of disposable, low cost and flexible electronic devices. To fulfil the wireless demand, it is necessary to prove the concept of self powered devices. In the case of paper electronics, this implies demonstrating the idea of self regenerated thin film paper batteries and its integration with other electronic components. Here we demonstrate this possibility by actuating the gate of paper transistors by paper batteries. We found that when a sheet of cellulose paper is covered in both faces with thin layers of opposite electrochemical potential materials, a voltage appears between both electrodes -paper battery, which is also self-regenerated. The value of the potential depends upon the materials used for anode and cathode. An open circuit voltage of 0.5V and a short-circuit current density of 1μA/cm² were obtained in the simplest structure produced (Cu/paper/Al). For actuating the gate of the paper transistor, seven paper batteries were integrated in the same substrate in series, supplying a voltage of 3.4V. This allows proper ON/OFF control of the paper transistor. Apart from that transparent conductive oxides can be also used as cathode/anode materials allowing so the production of thin film batteries with transparent electrodes compatible with flexible, invisible, self powered and wireless electronics.

Showing 5 of 12 publications

Conference Committee Involvement (5)

Novel Patterning Technologies 2025

23 February 2025 | San Jose, California, United States

Novel Patterning Technologies 2024

26 February 2024 | San Jose, California, United States

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

Novel Patterning Technologies 2021

22 February 2021 | Online Only, California, United States

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