Dr. Weiqiao Zhang Profile

Dr. Weiqiao Zhang

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Proceedings Article | 5 December 2024 Paper

High pulse power 1550 tunnel junction laser diode

Jianping Zhu, Fengxin Dong, Hongwei Qu, Xuyan Zhou, Ting Fu, Weiqiao Zhang, Chuanwang Xu, Xiangqian Li, Lijun Ge, Long Liu, Weiqian Cheng

Proceedings Volume 13418, 134183Q (2024) https://doi.org/10.1117/12.3048761

KEYWORDS: Semiconductor lasers, Quantum tunneling, Waveguides, LIDAR, High power lasers

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With the technology development, it is highly desirable to enhance the power and brightness of a 1550 pulsed laser in order to increase the detectable distance and improve the spatial resolution. In this paper, a 1550 tunnel junction high peak power semiconductor laser based on AlGaInAs/InP material system for lidar detection is designed, which peak output power is approximately three times that of a individual emitter.The adjacent individual emitter of the tunnel junction laser is connected by the tunnel junction, and each tunnel junction is formed by a highly doped p-type InGaAs layer and a highly doped n-type InGaAs layer. Crosslight Software's PICS3D module is used to simulate the epitaxial structure of an individual emitter, simulating its photoelectric characteristics and through the simulation and optimization of a individual emitter with a strip width of 100 μm and different cavity length, it is found that when the cavity length is 1000 μm, the slope efficiency of the single-junction laser can reach 0.37 W/A; when the cavity length is 800 μm, the slope efficiency of the individual emitter can reach 0.45 W/A. Therefore, shortening the cavity length of the laser can improve the slope efficiency of the laser, and it is expected to increase the slope efficiency of the three-tunnel junction laser to more than 1 W/A. It is expected to achieve a 1550 high-power tunnel junction semiconductor laser.

Proceedings Article | 5 December 2024 Paper

Study on AlGaInAs/AlGaAs quantum well intermixing effects based on SiO2 layer

Weiqian Cheng, Ting Fu, Yufei Wang, Fengxin Dong, Xuyan Zhou, Weiqiao Zhang, Chuanwang Xu, Xiangqian Li, Lijun Ge, Long Liu, Jianping Zhu

Proceedings Volume 13418, 1341830 (2024) https://doi.org/10.1117/12.3048624

KEYWORDS: Quantum wells, Annealing, Diffusion, Silica, Semiconductor lasers, Gallium arsenide, Dielectrics, Oxygen

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Quantum-well intermixing (QWI) technology is considered as an effective methodology to tune the post-growth bandgap energy of semiconductor compound materials, and is widely used in diode lasers and photonic integrated devices, and other fields. In order to improve the resistance to the catastrophic optical damage for 8XX semiconductor lasers based on AlGaInAs/AlGaAs quantum wells, we adopt a method of impurity-free vacancy disordering. Plasma enhanced chemical vapor deposition is used to grow SiO2 layer on the surface of the epi-wafer in the experiment. The influence of dielectric layer thickness, heat treatment temperature and heat treatment time on the QWI effect is explored through the control variable method, and the inhibition effect of oxygen ion bombardment on QWI is also investigated. The Photo-luminescence wavelength blue shift of the sample is 30-40 nm when the sample is covered by 450 nm SiO₂ and subjected to rapid heat treatment under 900°C for 270 s, which can be used as the non-absorbing region of the laser. In addition, in the experiment of suppressing QWI, the laser epitaxy is first bombarded by oxygen ions from 10 s to150s, and then is deposited with 450 nm SiO₂dielectric layer, and finally underwent rapid heat treatment under 875°C for 270s. It’s found that the sample blue shift is 5nm after 150 s bombardment, and the blue shift inhibition effect is good. Therefore, the combination of SiO₂dielectric layer and plasma bombardment can be applied to the preparation of laser transparent window

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