Detection in the short-wave infrared (SWIR) offers advantages like reduced solar noise and improved atmospheric transmission. Avalanche photodiodes (APDs) are ideal for low-light detection due to internal gain. While silicon (Si) APDs have low noise, they can't effectively detect SWIR light. Germanium (Ge) is good for SWIR detection but suffers from high noise. Ge-on-Si structure offers benefits like SWIR operation and efficient multiplication. This study showcases room temperature operation of a linear-mode pseudo-planar Ge-on-Si APD with high responsivity, gain, and low noise at 1550 nm. Moreover, a 10-pixel linear array exhibits uniform performance, promising for SWIR detection for potential LIDAR application.
This talk shows the recent development of linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes (APDs) in the short-wave infrared region. We demonstrate a 26 µm-diameter Ge-on-Si Geiger-mode APD with an extremely low noise-equivalent-power of 7.7 × 10−17 WHz−½ and a jitter value of 134 ± 10 ps at 1310 nm wavelength and at 100 K operating temperature. We demonstrate that a linear array of Ge-on-Si linear mode APDs comprising of 10 pixels shows high responsivity, highly uniform avalanche breakdown voltage and avalanche gain at 1550 nm wavelength and at room temperature.
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