In this study, we propose a deep-learning approach to establish the lithographic model for i-line photolithography and develop an optical proximity correction (OPC) algorithm to increase the resolution limit. The applications of RETs are not only on CMOS semiconductor, but also on some metasurface which used to patterning by electron beam lithography. With the OPC algorithm, we are able to manufacture a near-infrared metalens patterning by i-line photolithography in a more efficient and less expensive way.
In this work, we investigate the focusing efficiency and focal length dependence of a near infrared (NIR) metalens on the longitudinal and transverse modes of a Gaussian beam. We then propose a spatial multiplexing approach to design the metalens singlet optimized for mixed spectral and spatial modes. We have also made some metalens that can produce donut beam and Bessel beam.The finite difference time domain (FDTD) method is employed to simulate the designed metalens,and use photolithography to make metalens
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.