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Current SEM target design methodology relies on knowledge and experience with previous designs. This experience-based method can break down in cases of significant architectural or material changes, requiring a “best guess” approach for a new target. Validation of this guess is only available once wafers are created and measured. Using electron interaction simulations in the target design process enables waferless evaluation of targets. Simulations can also identify the necessary imaging conditions to generate a high-quality SEM image, indicating the required tool conditions for successful metrology. The work in this paper demonstrates a correlation between simulation and results on wafers.
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Kevin Houchens, Yaniv Abramovitz, Shay Attal, Ofer Adan, Nahum Bomshtein, Itai Buks, Ryan Hsieh, Tal Itzkovich, Jenny Perry, "SEM overlay target design using e-beam simulation," Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249623 (30 April 2023); https://doi.org/10.1117/12.2669984