Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)

H. Oizumi; Y. Tanaka; F. Kumasaka; I. Nishiyama; H. Kondo; M. Shiraishi; T. Oshino; K. Sugisaki; K. Murakami

doi:10.1117/12.599435

6 May 2005 Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)

H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama, H. Kondo, M. Shiraishi, T. Oshino, K. Sugisaki, K. Murakami

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.599435
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Three sets of projection optics (Sets 1, 2, and 3) were fabricated to the mark of a wave front error (WFE) of less than 1 nm. The RMS WFE is 7.5 nm for Set 1, 1.9 nm for Set 2, and at most 0.9 nm for Set 3. In addition, the RMS mid-spatial frequency roughness (MSFR), which affects flare, is 0.34 nm for Set 2 and 0.17 nm for Set 3. This paper discusses the current lithographic performance of HINA, especially the evaluation of flare and the replication of fine-pitch patterns. Several EUV masks were fabricated to evaluate the effects of flare and to replicate fine-pitch patterns. In the case of Set 2 optics, 90 nm lines and spaces were barely delineated using a bright-field mask due to the RMS MSFR of 0.34 nm, and replication of 70 nm lines and spaces were achieved using a dark-field mask. Since the RMS WFE and the RMS MSFR for Set 3 optics are half as much as that for Set 2 optics, the lithographic performance of HINA is markedly improved. 50 nm lines and spaces of non-chemically-amplified resist were delineated with the illumination condition of a partial coherence, σ, of 0.8 and 45 nm lines and spaces were delineated with the annular illumination condition of outer σ of 0.8 and inner σ of 0.5. In addition ultimate resolution of 30 nm lines and spaces of chemically-amplified resist was performed under the coherent illumination condition of σ of 0.0.

Citation Download Citation

H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama, H. Kondo, M. Shiraishi, T. Oshino, K. Sugisaki, and K. Murakami "Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.599435

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