Mask absorber roughness impact in extreme ultraviolet lithography

Alessandro Vaglio Pret; Roel Gronheid; Trey Graves; Mark D. Smith; John J. Biafore

doi:10.1117/1.3599077

1 April 2011 Mask absorber roughness impact in extreme ultraviolet lithography

Alessandro Vaglio Pret, Roel Gronheid, Trey Graves, Mark D. Smith, John J. Biafore

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 10, Issue 2, 023012 (April 2011). https://doi.org/10.1117/1.3599077

Abstract

Resist line-edge/width roughness is one of the most critical aspects in extreme UV lithography for the 32-nm technological node and below. It is originated by the uncertainties which characterize the lithographic process: source speckle effect, mask line and surface roughness, mirror roughness, flare effect, and resist pattern formation all contribute to the final roughness. In this paper mask and resist line-edge roughness were compared by means of frequency analysis on top-down scanning electron microscopy images: it was found that low frequency mask roughness is well correlated with the power spectral density of the resist roughness. Mask high-frequency components resulted less critical due to the natural cut-off of the optical system. Experimental data for both mask and resist were implemented in the PROLITH stochastic resist model simulator to quantify the mask line edge roughness contribution to the final resist roughness: the results showed that, for the particular lithographic setting used during the exposures, 16% of the low frequency resist roughness component is originated at the mask level. For this reason, mask impact was set as 0.6 nm of the overall line edge roughness resist budget.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Alessandro Vaglio Pret, Roel Gronheid, Trey Graves, Mark D. Smith, and John J. Biafore "Mask absorber roughness impact in extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(2), 023012 (1 April 2011). https://doi.org/10.1117/1.3599077

Published: 1 April 2011

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available