Mr. Congyong Zhu Profile

Congyong Zhu

at Virginia Commonwealth Univ

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 27 March 2013 Paper

Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETs

R. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, H. Morkoç

Proceedings Volume 8625, 86252B (2013) https://doi.org/10.1117/12.2005165

KEYWORDS: Phonons, Gallium nitride, Microwave radiation, Heterojunctions, Plasmons, Transistors, Aluminum, Aluminum nitride, Lithium, Reliability

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Proceedings Article | 4 March 2013 Paper

Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

Congyong Zhu, Fan Zhang, Romualdo Ferreyra, Xing Li, Cemil Kayis, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Proceedings Volume 8625, 86252H (2013) https://doi.org/10.1117/12.2000558

KEYWORDS: Capacitance, Microwave radiation, Fourier transforms, Gallium nitride, Phase measurement, Phonons, Heterojunctions, Field effect transistors, Interfaces, Reliability

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Proceedings Article | 28 February 2012 Paper

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects

Cemil Kayis, R. Ferreyra, Congyong Zhu, Mo Wu, X. Li, Ü. Özgür, A. Matulionis, H. Morkoç

Proceedings Volume 8262, 82621W (2012) https://doi.org/10.1117/12.908501

KEYWORDS: Phonons, Gallium nitride, Heterojunctions, Transistors, Semiconducting wafers, Phase measurement, Ultrafast phenomena, Astatine, Molybdenum, Ultrafast measurement systems

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Proceedings Article | 28 February 2012 Paper

Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions

Romualdo Ferreyra, Cemil Kayis, Congvong Zhu, Ümit Özgür, Hadis Morkoç

Proceedings Volume 8262, 82621U (2012) https://doi.org/10.1117/12.907515

KEYWORDS: Transistors, Heterojunctions, Gallium nitride, Phase measurement, Reliability, Indium, Measurement devices, Calibration, Semiconducting wafers, Piezoelectric effects

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Proceedings Article | 28 February 2012 Paper

Degradation mechanism of InAlN/GaN based HFETs under high electric field stress

Congyong Zhu, Mo Wu, Cemil Kayis, Fan Zhang, Xing Li, Romualdo Ferreyra, Vitaliy Avrutin, Ümit Özgur, Hadis Morkoç

Proceedings Volume 8262, 826225 (2012) https://doi.org/10.1117/12.903983

KEYWORDS: Field effect transistors, Piezoelectric effects, Gallium nitride, Transistors, Applied physics, Reliability, Phonons, Heterojunctions, Lithium, Molybdenum

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Proceedings Article | 4 March 2011 Paper

Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Cemil Kayis, C. Y. Zhu, Mo Wu, Xing Li, Ümit Özgür, Hadis Morkoç

Proceedings Volume 7939, 79392G (2011) https://doi.org/10.1117/12.875723

KEYWORDS: Gallium nitride, Heterojunctions, Transistors, Aluminum nitride, Reliability, Phonons, Calibration, Sapphire, Field effect transistors, Neodymium

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Proceedings Article | 4 March 2011 Paper

Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs

Cemil Kayis, Jacob Leach, C. Y. Zhu, Mo Wu, X. Li, X. Yang, Veena Misra, Peter Handel, Ü. Özgür, H. Morkoç

Proceedings Volume 7939, 79392F (2011) https://doi.org/10.1117/12.875692

KEYWORDS: Dielectrics, Oxides, Temperature metrology, Interfaces, Gallium nitride, Scattering, Heterojunctions, Transistors, Interference (communication), Sapphire

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Proceedings Article | 12 March 2010 Paper

1/f noise: a window to HFET stability

Peter Handel, Taher Sherif, Cemil Kayis, Jacob Leach, Congyong Zhu, Hadis Morkoç

Proceedings Volume 7602, 76020M (2010) https://doi.org/10.1117/12.842948

KEYWORDS: Phonons, Gallium nitride, Field effect transistors, Polarization, Plasma, Phase measurement, Reliability, Plasmons, Quantum physics, Resistance

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Showing 5 of 8 publications

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