We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and
a low specific contact resistivity (ρc) of 1.1×10-6 ohm-cm2 on n-type AlGaN/GaN heterostructures. The use of Cr
interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on
the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact
stack.
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