Dr. Izabella Grzegory Profile

Dr. Izabella Grzegory

at TopGaN Ltd

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 21 March 2023 Presentation

Presentation

Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences

Andrzej Taube, Oskar Sadowski, Iwona Sankowska, Karolina Pągowska, Marek Ekielski, Paweł Michałowski, Joanna Jankowska-Śliwińska, Jarosław Tarenko, Anna Szerling, Paweł Prystawko, Kacper Sierakowski, Piotr Jaroszyński, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648902

KEYWORDS: Gallium nitride, Annealing, Ions, Silicon, Diffusion, Magnesium, Ion implantation, Chemical species, X-ray diffraction, Surface roughness

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Proceedings Article | 21 March 2023 Presentation

Presentation

Optimization of bevelled mesa fabrication process for vertical GaN p-n diodes

Jarosław Tarenko, Maciej Kamiński, Renata Kruszka, Magdalena Zadura, Andrzej Taube, Marek Ekielski, Joanna Jankowska-Śliwińska, Anna Szerling, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648891

KEYWORDS: Gallium nitride, Diodes, Photomasks, Photoresist materials, Photoresist developing, Etching, Semiconductors, Scanning electron microscopy, Reactive ion etching, Profilometers

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Proceedings Article | 13 March 2019 Presentation

Presentation

Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)

Michal Bockowski, Izabella Grzegory, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Mikolaj Amilusik, Malgorzata Iwinska, Aneta Sidor, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Marcin Zajac

Proceedings Volume 10918, 1091804 (2019) https://doi.org/10.1117/12.2508154

KEYWORDS: Manganese, Iron, Magnesium, Gallium nitride, Doping, Crystals, Solids, Methane, Carbon, Temperature metrology

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Proceedings Article | 26 February 2016 Paper

Paper

HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut

Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, Michal Bockowski

Proceedings Volume 9748, 974809 (2016) https://doi.org/10.1117/12.2208854

KEYWORDS: Gallium nitride, Silicon, Semiconducting wafers, Crystals, Sapphire, Etching, Raman spectroscopy, Molybdenum, Reflection, Photomasks

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Proceedings Article | 13 March 2015 Paper

Paper

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

M. Amilusik, T. Sochacki, B. Lucznik, M. Fijalkowski, M. Iwinska, J. Weyher, E. Grzanka, P. Krupczynska, A. Khachapuridze, I. Grzegory, M. Bockowski

Proceedings Volume 9363, 93630F (2015) https://doi.org/10.1117/12.2077929

KEYWORDS: Crystals, Gallium nitride, Hydrogen, Nitrogen, Gases, Raman spectroscopy, Oxygen, Silicon, Quartz, Interfaces

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Proceedings Article | 4 March 2013 Paper

Paper

HVPE-GaN growth on ammonothermal GaN crystals

Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Michal Boćkowski, Janusz Weyher, Grzegorz Nowak, Bogdan Sadovyi, Grzegorz Kamler, Izabella Grzegory, Robert Kucharski, Marcin Zajac, Robert Doradzinski, Robert Dwilinski

Proceedings Volume 8625, 86250B (2013) https://doi.org/10.1117/12.2003699

KEYWORDS: Crystals, Gallium nitride, Annealing, Surface finishing, Polishing, Interfaces, Gallium, Etching, X-rays, Quartz

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Proceedings Article | 4 March 2013 Paper

Paper

Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Michal Boćkowski, Boleslaw Lucznik, Tomasz Sochacki, Mikolaj Amilusik, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Izabella Grzegory

Proceedings Volume 8625, 862509 (2013) https://doi.org/10.1117/12.2002042

KEYWORDS: Crystals, Gallium nitride, Gallium, Nitrogen, Oxygen, Liquids, Indium, Magnesium, Liquid crystals, Polishing

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Proceedings Article | 4 March 2013 Paper

Paper

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski

Proceedings Volume 8625, 862512 (2013) https://doi.org/10.1117/12.2001997

KEYWORDS: Gallium nitride, Indium gallium nitride, Semiconductor lasers, Plasma, Waveguides, Quantum wells, Cladding, Nitrogen, Diodes

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Proceedings Article | 17 February 2011 Paper

Paper

Plasmonic cladding InGaN MQW laser diodes

P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, T. Suski

Proceedings Volume 7953, 79530I (2011) https://doi.org/10.1117/12.873929

KEYWORDS: Cladding, Semiconductor lasers, Gallium nitride, Plasmonics, Refractive index, Indium gallium nitride, Nitrogen, Waveguides, Plasma, Molecular beam epitaxy

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Proceedings Article | 28 February 2008 Paper

Paper

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, T. Swietlik, L. Marona, T. Stacewicz, P. Perlin

Proceedings Volume 6894, 68940Q (2008) https://doi.org/10.1117/12.762871

KEYWORDS: Temperature metrology, Indium gallium nitride, Quantum wells, Gallium nitride, Semiconductor lasers, Laser damage threshold, Laser stabilization, Spectroscopes, Phonons, Copper

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Proceedings Article | 15 February 2008 Paper

Paper

Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

L. Marona, P. Wiśniewski, M. Leszczyński, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, A. Czerwinski, M. Pluska, J. Ratajczak, P. Perlin

Proceedings Volume 6894, 68940R (2008) https://doi.org/10.1117/12.762220

KEYWORDS: Semiconductor lasers, Quantum wells, Gallium nitride, Indium gallium nitride, Reliability, Diffusion, Laser damage threshold, Laser stabilization, Magnesium, Temperature metrology

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Proceedings Article | 14 February 2008 Paper

Paper

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6910, 69100G (2008) https://doi.org/10.1117/12.755767

KEYWORDS: Gallium nitride, Crystals, Indium, Indium gallium nitride, Polishing, Semiconducting wafers, Surface finishing, Quantum wells, Manufacturing, Light emitting diodes

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Proceedings Article | 8 February 2007 Paper

Paper

Tunable broad-area InGaN laser diodes in external cavity

K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, M. Maszkowicz, P. Perlin

Proceedings Volume 6485, 648502 (2007) https://doi.org/10.1117/12.698285

KEYWORDS: Semiconductor lasers, Indium gallium nitride, Diffraction gratings, Gallium nitride, Diodes, Spectroscopy, Pulsed laser operation, Antireflective coatings, Mirrors, Spectroscopes

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Proceedings Article | 8 February 2007 Paper

Paper

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

T. Swietlik, C. Skierbiszewski, R. Czernecki, G. Franssen, P. Wisniewski, M. Leszczynski, I. Grzegory, P. Mensz, T. Suski, P. Perlin

Proceedings Volume 6473, 64731E (2007) https://doi.org/10.1117/12.700652

KEYWORDS: Gallium, Gallium nitride, Luminescence, Semiconductor lasers, Quantum wells, Aluminum, Optical properties, Plasma, Waveguides, Photons

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Proceedings Article | 8 February 2007 Paper

Paper

Comprehensive study of reliability of InGaN-based laser diodes

L. Marona, M. Sarzynski, P. Wi?niewski, M. Leszczy?ski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, G. Kamler, A. Czerwinski, M. Pluska, J. Ratajczak, P. Perlin

Proceedings Volume 6485, 648504 (2007) https://doi.org/10.1117/12.699001

KEYWORDS: Semiconductor lasers, Gallium nitride, Reliability, Laser damage threshold, Diffusion, Indium gallium nitride, Crystals, Diodes, Gallium, Quantum efficiency

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Proceedings Article | 17 April 2006 Paper

Paper

Load dislocation density broad area high power CW operated InGaN laser diodes

P. Perlin, P. Wiśniewski, R. Czernecki, P. Prystawko, M. Leszczyński, T. Suski, I. Grzegory, L. Marona, T. Świetlik, K. Komorowska, S. Porowski

Proceedings Volume 6184, 61840H (2006) https://doi.org/10.1117/12.662912

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Continuous wave operation, Gallium nitride, Indium gallium nitride, High power lasers, Gallium, Crystals, Aluminum

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Proceedings Article | 14 April 2006 Paper

Paper

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

L. Marona, P. Wisniewski, P. Prystawko, S. Porowski, T. Suski, M. Leszczynski, I. Grzegory, R. Czernecki, P. Perlin, T. Riemann, J. Christen

Proceedings Volume 6184, 61840G (2006) https://doi.org/10.1117/12.662327

KEYWORDS: Semiconductor lasers, Quantum efficiency, Gallium nitride, Laser damage threshold, Indium gallium nitride, Reliability, Quantum wells, Mirrors, Optical coatings, Diffusion

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Proceedings Article | 3 March 2006 Paper

Paper

Growth of bulk GaN by HVPE on pressure grown seeds

I. Grzegory, B. Łucznik, M. Boćkowski, B. Pastuszka, M. Kryśko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6121, 612107 (2006) https://doi.org/10.1117/12.645976

KEYWORDS: Crystals, Gallium nitride, Etching, Polishing, Surface finishing, Reflection, Reactive ion etching, Electrochemical etching, X-rays, Crystallography

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Proceedings Article | 3 March 2006 Paper

Paper

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

C. Skierbiszewski, G. Cywiński, M. Siekacz, A. Feduniewicz-Zmuda, L. Nevou, L. Doyennette, M. Tchernycheva, F. Julien, J. Smalc, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, J. Domagała, T. Remmele, M. Albrecht, S. Porowski

Proceedings Volume 6121, 612109 (2006) https://doi.org/10.1117/12.646014

KEYWORDS: Aluminum, Quantum wells, Gallium nitride, Absorption, Indium, Telecommunications, Polishing, Plasma, Molecular beam epitaxy, Superlattices

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Proceedings Article | 3 March 2006 Paper

Paper

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method

M. Bockowski, I. Grzegory, G. Nowak, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski

Proceedings Volume 6121, 612103 (2006) https://doi.org/10.1117/12.645066

KEYWORDS: Gallium nitride, Crystals, Silicon, Gallium, Molybdenum, Tungsten, Sapphire, Liquids, Scanning electron microscopy, Nitrogen

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Proceedings Article | 22 February 2006 Paper

Paper

Broad-area high-power CW operated InGaN laser diodes

P. Wiśniewski, R. Czernecki, P. Prystawko, M. Maszkowicz, M. Leszczyński, T. Suski, I. Grzegory, S. Porowski, M. Marona, T. Świetlik, P. Perlin

Proceedings Volume 6133, 61330Q (2006) https://doi.org/10.1117/12.645049

KEYWORDS: Semiconductor lasers, Continuous wave operation, High power lasers, Gallium nitride, Indium gallium nitride, Laser damage threshold, Pulsed laser operation, Diodes, Gallium, Crystals

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Proceedings Article | 1 April 2005 Paper

Paper

Properties of violet laser diodes grown on bulk GaN substrates

Piotr Perlin, Lucja Marona, Tomasz Swietlik, Michal Leszczynski, Pawel Prystawko, Przemyslaw Wisniewski, Robert Czernecki, Gijs Franssen, Szymon Grzanka, Grzegorz Kamler, Jola Borysiuk, Janusz Weyher, Izabella Grzegory, Tadeusz Suski, Sylwester Porowski, Till Riemann, Jurgen Christen

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.587040

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Laser crystals, Gallium, Electrons, Cladding, Pulsed laser operation, Aluminum, Continuous wave operation

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Proceedings Article | 11 May 2004 Paper

Paper

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Piotr Perlin, Mike Leszczynski, Pawel Prystawko, Robert Czernetzki, Przemek Wisniewski, Janusz Weyher, Grzegorz Nowak, Jola Borysiuk, Lucja Gorczyca, Tomasz Swietlik, Gijs Franssen, Agata Bering, Czeslaw Skierbiszewski, Izabella Grzegory, Tadek Suski, Sylwester Porowski

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.523580

KEYWORDS: Gallium nitride, Crystals, Semiconductor lasers, High power lasers, Diodes, Sapphire, Gallium, Temperature metrology, Mirrors, Etching

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Proceedings Article | 28 August 2002 Paper

Paper

Optoelectronic devices built on bulk GaN substrates

P. Perlin, I. Grzegory, M. Leszczynski, P. Prystawko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, M. Bockowski, B. Lucznik, G. Franssen, S. Porowski

Proceedings Volume 10303, 1030306 (2002) https://doi.org/10.1117/12.482622

KEYWORDS: Optoelectronic devices, Gallium nitride, Light emitting diodes, Semiconductor lasers, Crystals, Homoepitaxy, Optical properties, High power lasers, Diodes

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Proceedings Article | 17 April 2001 Paper

Paper

Epitaxy on GaN bulk crystals

M. Leszczynski, P. Prystawko, R. Czernecki, J. Lehnert, Piotr Perlin, P. Wisniewski, Cz. Skierbiszewski, T. Suski, G. Nowak, Fouad Karouta, J. Holst, I. Grzegory, S. Porowski

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425412

KEYWORDS: Gallium nitride, Crystals, Metalorganic chemical vapor deposition, X-ray diffraction, Sapphire, Epitaxy, Luminescence, Reflectivity, Single crystal X-ray diffraction, Atomic force microscopy

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Proceedings Article | 8 March 2001 Paper

Paper

Luminescence of nonthermalized electron-hole plasma in GaN epilayers

Saulius Jursenas, G. Kurilcik, N. Kurilcik, Gintautas Tamulaitis, K. Kazlauskas, Arturas Zukauskas, P. Prystawko, M. Leszczynski, T. Suski, Piotr Perlin, I. Grzegory, S. Porowski

Proceedings Volume 4318, (2001) https://doi.org/10.1117/12.417587

KEYWORDS: Luminescence, Gallium nitride, Plasma, Picosecond phenomena, Sapphire

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Showing 5 of 26 publications

Conference Committee Involvement (2)

Gallium Nitride Materials and Devices III

21 January 2008 | San Jose, California, United States

Gallium Nitride Materials and Devices II

22 January 2007 | San Jose, California, United States

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