Mr. Jeffrey A. Albelo Profile

Jeffrey A. Albelo

CEO at Quantum Group Consulting Ltd

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Author

Publications (8)

Proceedings Article | 14 February 2008 Paper

Picosecond laser micromachining of advanced semiconductor logic devices

Jeffrey Albelo, Peter Pirogovsky, James O'Brien, Brian Baird

Proceedings Volume 6871, 687122 (2008) https://doi.org/10.1117/12.772111

KEYWORDS: Picosecond phenomena, Micromachining, Laser processing, Logic devices, Semiconductors, Metals, Semiconducting wafers, Photomicroscopy, Pulsed laser operation, Laser applications

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Proceedings Article | 5 September 2001 Paper

Photoresist processing for high-resolution DUV lithography at 257 nm

Scott Fuller, Warren Montgomery, Jeff Albelo, William Rodrigues, Alex Buxbaum

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438370

KEYWORDS: Photomasks, Photoresist processing, Critical dimension metrology, Lithography, Photoresist materials, Deep ultraviolet, Diffusion, Manufacturing, Coating, Process control

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Proceedings Article | 24 August 2001 Paper

Photolithographic evaluation of deep UV resist materials for mask-making applications

Warren Montgomery, Alex Buxbaum, William Rodrigues, Jeff Albelo, Scott Fuller

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436813

KEYWORDS: Etching, Photomasks, Photoresist processing, Deep ultraviolet, Critical dimension metrology, Manufacturing, Coating, Lithography, Semiconducting wafers, Chemistry

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Proceedings Article | 24 August 2001 Paper

Rational design of bleachable nonchemically amplified DUV photoactive compounds

Benjamen Rathsack, Peter Tattersall, Cyrus Tabery, Kathleen Lou, Timothy Stachowiak, David Medeiros, Jeff Albelo, Peter Pirogovsky, Dennis McKean, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436887

KEYWORDS: Picture Archiving and Communication System, Deep ultraviolet, Chromophores, Photoresist processing, Lithography, Absorbance, Molecules, Mask making, Photomasks, Hydrogen

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Proceedings Article | 22 January 2001 Paper

Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication

Benjamen Rathsack, Cyrus Tabery, Jeff Albelo, Peter Buck, C. Grant Willson

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410739

KEYWORDS: Photomasks, Chromium, Reflectivity, Oxides, Absorption, Refraction, Chemically amplified resists, Lithography, Photoresist processing, Mask making

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Proceedings Article | 22 January 2001 Paper

Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists

Jeff Albelo, Benjamen Rathsack, Peter Pirogovsky

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410734

KEYWORDS: Critical dimension metrology, Reflectivity, Photomasks, Photoresist materials, Photoresist processing, Polymers, Prototyping, Semiconducting wafers, Deep ultraviolet, Antireflective coatings

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Proceedings Article | 23 June 2000 Paper

Simulation-based formulation of a nonchemically amplified resist for 257-nm laser mask fabrication

Benjamen Rathsack, Cyrus Tabery, Timothy Stachowiak, Jeff Albelo, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388345

KEYWORDS: Picture Archiving and Communication System, Lithography, Quantum efficiency, Absorbance, Photomasks, Photoresist developing, Photoresist materials, Deep ultraviolet, Photoresist processing, Refraction

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The demand for smaller and more uniform features on photomasks has inspired consideration of a DUV (257 nm) resist process for optical pattern generation. Chemically amplified resists require storage and exposure in carbon filtered environments, and they require post-exposure bakes. Few mask facilities are set up to handle chemically amplified resists commonly used in deep UV wafer fabrication process. Hence, it is appropriate to explore the lithographic performance of non-chemically amplified resist materials for 257 nm laser photomask lithography. Resist characterization and lithography simulation were used to formulate a 257 nm resist from DNQ/novolak materials provided by a commercial resist supplier. Diazonaphthoquinone (DNQ)/novolak resists have not been used for DUV Integrated Circuit (IC) applications mainly due to the low sensitivity and the strong absorbance of the DNQ photoactive compound (PAC) at 248 nm. However, a 2,1,4 DNQ based resist has been characterized that bleaches at 257 nm and inhibits novolak. The photoproduct of the 2,1,4 DNQ PAC is much more transparent at 257 nm than 248 nm. Novolak resin also has an absorbance minimum in the DUV at 257 nm that provides transparency similar to poly (hydroxystyrene). Traditional photoresist formulation requires tedious, iterative, and expensive manufacturing trials. Resist characterization and lithography simulation can be used to relate lithographic performance (resolution, sidewall and process latitude) to resist formulation parameters (PAC concentration, developer concentration, etc.), thereby supporting the formulation optimization. An exposure system using a 257 nm frequency doubled argon laser system has been constructed to study the resist photokinetics. Dill exposure parameters (A, B and C) have been extracted for a 2,1,4 DNQ/novolak based resist. Dissolution rate measurements have been made with a development rate monitor developed at the University of Texas at Austin. Simulation using the exposure and development rate models were used to determine the resist formulation that maximizes the sidewall angle and exposure latitude for isolated resist spaces. Preliminary experiments reveal that a DNQ/novolak resist is capable of resolving 0.30 micrometer linewidths using a 257 nm optical pattern generator.

Proceedings Article | 29 June 1998 Paper

Photoresist performance evaluation of implant resist systems

David Pritchard, Warren Montgomery, James Kimball, Jeff Albelo

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312367

KEYWORDS: Semiconducting wafers, Photoresist materials, Ion beams, Manufacturing, Photoresist processing, Ions, Phase modulation, Semiconductors, Lithography, Photomasks

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Showing 5 of 8 publications

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