Corning has focused its recent efforts on coefficient of thermal expansion (CTE) metrology improvements. Due to the unique environment required for EUVL technology, EUVL optics (and photomasks) require extremely uniform CTE properties, with targeted variations of less than 1ppb/K. Until now, no practical metrology technique existed that could accurately verify if a material met such requirements due to the lack of precision. Corning has previously introduced the idea of measuring CTE in ULE (registered trademark) Glass using Phase Measuring Interferometry (PMI) by discovering the correlation between refractive index and CTE in ULE (registered trademark) Glass. However, refinement of the correlation was necessary. This paper focuses on the progress made towards that end, which has resulted in the ability to non-destructively measure peak to valley CTE variations to within 57 parts per trillion per degree Kelvin (ppt/K) at possible spatial resolutions in the micron range on thick or thin samples.
Corning Incorporated is improving material and metrology in order to meet the requirements for both EUVL optics and photomask substrate applications. The EUV optics requirements present a unique challenge to the lens designer. The temperature of each optic in the system can experience a different thermal profile based upon the geometry of the element and the intensity of the beam at each element location. This places a need on the optical material for small variation in the coefficient of thermal expansion (CTE) uniformity and the ability to achieve targeted optimum zero CTE cross-over temperatures. This paper addresses Corning’s ability to target specified CTE values as well as discusses a new metrology tool for measuring CTE variations within the glass. Past data suggested that index variation within the material were related to CTE variations. This correlation was investigated with the results presented here. This preliminary work suggests a new metrology tool with the capability of non-destructively measuring peak to valley (P-V) CTE variations to within 70 parts per trillion per degree Kelvin (ppt/K) at possible spatial frequencies in the micron range on thick or thin samples. This technique is vital for certifying photomasks and will be the foundation needed to reduce CTE variations in photomasks and optics to targeted values of less than 1 ppb/K for future EUVL needs.
Though the Semiconductor market is soft, the technology that drives it continues to march on. Corning has supplied the semiconductor market through two generations of lithography with KrF and ArF grade HPFS Glass; the established excellence will continue with the supply of CaF2 for 157nm and ULE Glass for 13nm. ULE Glass is a low expansion silicate glass that has historically been used for ground and spaced based telescope mirrors such as Gemini and Hubble. Industry experts have now identified ULE Glass as a material of choice for EUVL applications; but with new opportunities come new hurdles, and ULE Glass will need to be improved in order to meet the challenges of EUVL. The purpose of this presentation is to give the audience a general update of Corning's ULE Glass improvement effort for EUVL, with focus on EUV photomask requirements; it will include an overview of key ULE Glass properties, improvements that have been made, and a road map of work to be done.
The EUVL industry has unique material requirements, which are being addressed. Implementation of metrology methods new to ULE Glass will be discussed along with material characteristics altered to meet the needs of EUVL. Metrology methods include multiple means of evaluating the striae, CTE and inclusions. Material characteristics have been altered to better meet the demands of the industry. The reduction in inclusion levels along with other improvements such as in the area of striae will be discussed here. Improvements of greater than 4x were achieved in these preliminary striae reduction trials.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.