Switching of phase change memory (PCM) materials between crystalline and amorphous phase with electrical pulses and optical properties make it an important candidate for storage class memory and neuromorphic computing. However, PCM materials can be sensitive to air exposure during integration, therefore in-vacuo RIE and encapsulation is important to provide the required oxygen diffusion barrier. Low temperature SiN deposition can be used for low thermal budget integration schemes provided a good film conformality is achieved and damage or etching to the PCM elements is mitigated. In this work, ammonia- (NH3-) free, plasma enhanced chemical vapor deposition (PECVD) SiN films deposited at 40°C (microwave plasma) and 200°C (inductively coupled plasma), are compared and wet etch rates and optical properties are evaluated. NH3-free SiN films were deposited using SiH4, N2, H2, and Ar as source gases. Tuning the plasma parameters during encapsulation we observed simultaneous selective etching of GST and controlled SiN film deposition. Hydrogen and argon addition to the plasma mixture provided the main control knob for in-situ GST trimming during deposition, avoiding any type of elemental or structural damage to the GST films.
Analyses of unit process trace data are critical components of modern semiconductor manufacturing process control. While process development environments share many characteristics with manufacturing environments, development tools and processes may not be suitable candidates for the deployment of traditional trace analytics such as FDC applications. Here we describe the adaptive use of large scale, proactive process trace monitoring and reactive root cause analytics for supporting development operations. The large-scale monitoring application we have deployed is comprehensive in scope and scale and focusses on monitoring the stability of a chamber over time. The reactive root cause application we have deployed automatically searches large trace data spaces to identify trace data elements with potentially interesting relationships to variations in on-wafer measurements and is designed to handle the small sample sizes encountered frequently in development operations.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.