Mr. Patrick Wellenius Profile

Patrick Wellenius

Doctoral Candidate

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 1 May 2009 Paper

The potential of wide band-gap semiconductor materials in laser-induced semiconductor switches

Dane Phillips, Eric Smith, Haojun Luo, Patrick Wellenius, John Muth, John Foreman, Henry Everitt

Proceedings Volume 7311, 731109 (2009) https://doi.org/10.1117/12.818741

KEYWORDS: Semiconductors, Semiconductor lasers, Zinc oxide, Gallium nitride, Terahertz radiation, Silicon carbide, Pulsed laser operation, Wide bandgap semiconductors, Switches, Sapphire lasers

Read Abstract +

Laser induced Semiconductor Switches (LSS), comprised of a gap antenna deposited on a semiconductor substrate and photoexcited by a pulsed laser, are the primary source of THz radiation utilized in time-domain spectroscopy (TDS). THz-TDS applications such as standoff detection and imaging would greatly benefit from greater amounts of power coupled into free space radiation from these sources. The most common LSS device is based on low temperature-grown (LT) GaAs photoexcited by Ti:sapphire lasers, but its power performance is fundamentally limited by low breakdown voltage. By contrast, wide band-gap semiconductor-based LSS devices have much higher breakdown voltage and could provide higher radiant power efficiency but must be photoexcited blue or ultraviolet pulsed lasers. Here we report an experimental and theoretical study of 10 wide band-gap semiconductor LSS host materials: traditional semiconductors GaN, SiC, and ZnO, both pristine and with various dopants and alloys, including ternary and quaternary materials MgZnO and InGaZnO. The objective of this study was to identify the wide bandgap hosts with the greatest promise for LSS devices and compare their performance with LT-GaAs. From this effort three materials, Fe:GaN, MgZnO and Te:ZnO, were identified as having great potential as LSS devices because of their band-gap coincidence with frequency multiplied Ti:Sapphire lasers, increased thermal conductivity and higher breakdown voltage compared to LT-GaAs, as well as picoseconds scale recombination times.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years