Mr. Pervaiz Kareem Profile

Pervaiz Kareem

at Synopsys Korea Inc

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Publications (3)

Proceedings Article | 28 April 2023 Presentation + Paper

Process optimization for next generation high-NA EUV patterning by computational lithography techniques

Zachary Levinson, Thuc Dam, Pervaiz Kareem, C. Jay Lee, Wolfgang Demmerle, Ulrich Klostermann

Proceedings Volume 12494, 124940W (2023) https://doi.org/10.1117/12.2658580

KEYWORDS: Extreme ultraviolet, SRAF, Semiconducting wafers, Extreme ultraviolet lithography, Optical lithography, Scanners, Reflection, Lithography, Computational lithography, Process control

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The lithography industry has historically striven to improve resolution by reducing wavelength and increasing the lens’ numerical aperture (NA). The introduction of 0.33 NA extreme ultraviolet (EUV) lithography into high-volume manufacturing (HVM) represents the largest jump in resolution ever achieved by the industry. However, even this resolution is not sufficient for the patterns required for beyond the 2 nm logic technology node. This is due to low contrast and the diffraction limit of current EUVL scanners for the mask patterns required for these nodes. Instead, the resolution must be improved by increasing the NA. This will also increase the contrast of patterns which had insufficient contrast at 0.33 NA, which will in turn improve LCDU and defectivity. This change is not without its challenges though. Increasing the NA from 0.33 to 0.55 will cause a significant reduction in depth of focus. In addition, stronger mask 3D effects can cause pattern dependent shifts in best focus. As a result, the common overlapping process window of several critical patterns can become strongly diminished. The use of anamorphic optics will require two separate half-field exposures to obtain the equivalent of a single full-field exposure on current EUV and DUV scanners. For some chip sizes, this will require stitching two half-fields together to pattern the full chip area. In previous technology nodes, the process window could be improved using SMO and SRAFs. In addition, over the last five years, the industry has put significant effort into studying alternative absorbing materials. These materials can significantly reduce the mask 3D effects by reducing the thickness of the absorber. The use of alternative absorbers alone will not be sufficient for improving the overlapping process window. Instead, several techniques must be simultaneously utilized in order to ensure sufficient overall process window. Optimization of overlapping process windows is critical for successful insertion of high-NA EUVL into HVM. In this paper we analyze how the process window of critical patterns can be optimized by using different optimizations. We will show for realistic mask designs how process window can be improved in different process steps. Double exposure from half-field stitching will also be included in the process evaluation. We use both rigorous and compact modeling in a complimentary fashion for overall process optimization analysis. All techniques presented in this paper accurately model the anamorphic, centrally obscured optics of the upcoming next-generation high-NA scanners.

Proceedings Article | 15 March 2021 Presentation + Paper

Test pattern extraction for lithography modeling under design rule revisions

Gangmin Cho, Yonghwi Kwon, Pervaiz Kareem, Sungho Kim, Youngsoo Shin

Proceedings Volume 11613, 116130O (2021) https://doi.org/10.1117/12.2583916

KEYWORDS: Lithography, Optical spheres

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Proceedings Article | 12 March 2021 Presentation + Paper

Fast prediction of process variation band through machine learning models

Pervaiz Kareem, Yonghwi Kwon, Gangmin Cho, Youngsoo Shin

Proceedings Volume 11613, 1161306 (2021) https://doi.org/10.1117/12.2583805

KEYWORDS: Machine learning, Lithography, Photomasks, Image segmentation, Source mask optimization, Process modeling, Manufacturing, Image resolution, Deconvolution, Convolution

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